In-situ ESR observation of dangling bond formation during very thinamorphous SiO₂ growth on Si

摘要

The processes of formation of the interface dangling bond (P_b centers) during amorphous SiO₂ thin-film growth, byoxidation, on a clean Si(111) substrate was performed. Within 0.4 nm ofthe oxide layer, the number of P_b centers rapidly reached thesame order of magnitude as that in thick a-SiO₂ films. Theseresults indicate that the interface defects between Si and a-SiO₂ originate mainly from the short-range chemical bondingconfigurations, not from the long-range accumulation of structuralmisfits between the two materials