首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual >High-gain transimpedance amplifier in InP-based HBT technology forthe receiver in 40 Gb/s optical-fiber TDM links
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High-gain transimpedance amplifier in InP-based HBT technology forthe receiver in 40 Gb/s optical-fiber TDM links

机译:基于InP的HBT技术的高增益互阻放大器40 Gb / s光纤TDM链路中的接收器

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A monolithic integrated transimpedance amplifier for the receiverin a 40 Gb/s optical-fiber TDM system has been fabricated in anInP-based HBT technology. Despite its high gain (transimpedance of 2 kBin the limiting mode, 10 kΩ in the linear mode) the completeamplifier was realized on a single chip. Clear output eye diagrams weremeasured up to 43 Gb/s at the differential 50 Ω output: underrealistic driving conditions. The output voltage swing of 0.6 Vpp does not change within the demanded input dynamic range of 6 dB.At the upper input current level even 48 Gb/s was reached. The powerconsumption is approximately 600 mW at a single supply voltage of -5.5 V
机译:用于接收器的单片集成跨阻放大器 在40 Gb / s光纤TDM系统中 基于InP的HBT技术。尽管增益很高(2 kB的跨阻) 在极限模式下为10kΩ(在线性模式下) 放大器在单个芯片上实现。清晰的输出眼图分别为 在差分50Ω输出下测得的速率高达43 Gb / s: 现实的驾驶条件。输出电压摆幅为0.6 V pp 在要求的6 dB输入动态范围内不变。 在较高的输入电流水平下,甚至达到48 Gb / s。动力 在-5.5 V的单电源电压下的功耗约为600 mW

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