Analysis of PAE 50 highly linear characteristics of new structuretransistor “self-aligned gate PHEMT” for W-CDMA application

摘要

This paper describes the analysis of linear performance of PAE 50%for wide band CDMA (W-CDMA) with a new structure FET “Self alignedgate PHEMT (Saga-PHEMT)” which was fabricated in 0.8 μmWNx-gate self aligned structure on epitaxial layers. We obtainedrelations between ACPR and AM-AM/AM-PM conversions as follows; the ACPRis mainly controlled with the AM-AM conversion, and the phase-delay ofthe AM-PM conversion functions effectively as prevention of ACPRdeteriorations which are caused by nonlinear AM-AM conversion