首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual >Inclusion of topside metal heat spreading in the determination ofHBT temperatures by electrical and geometrical methods GaAs devices
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Inclusion of topside metal heat spreading in the determination ofHBT temperatures by electrical and geometrical methods GaAs devices

机译:确定顶部金属的热量扩散。通过电学和几何学方法测量的HBT温度GaAs器件

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Topside metal helps spread the heat dissipated by HBTs and reducesboth the thermal resistance at a given temperature, and its temperaturedependence. In this paper we describe new methods for including topsidemetal cooling effects in both an electrical method of extracting HBTtemperature and a geometry-based method for calculating HBT temperatures
机译:顶部金属有助于散布HBT散发的热量并减少 给定温度下的热阻及其温度 依赖。在本文中,我们描述了包含顶面的新方法 两种提取HBT的电子方法中的金属冷却效果 温度和基于几何的HBT温度计算方法

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