Three-dimensional packaging is considered to offer a solution forhigh packaging density and enhanced electrical performance, which arerequired for the present and future electronic systems. A new type ofthree-dimensional package was recently developed. These were named“memory cubes”, in which thin small outline J-leadedpackages or thin quad flat J-leaded packages were stacked, andelectrically interconnected by soldering of the outer leads. Analyses ofelectrical performances of the memory cubes as the main memories in acomputer system were made through the electrical simulations of a 4Mb×9 DRAM memory cube and an equivalent 4 Mb×9 DRAM singleinline memory module. Electrical simulation showed that memory cubereduced the capacitance load of the longest on-board nets of typicalmemory board by 5% to 10%, reduced the reflection behavior of these netsby its lumped load character, and resulted in an overalldriver-to-receiver net performance improvement versus the equivalentsingle inline memory module by about 15%
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