Process integration and optimization of GaAs MESFET and MSM basedopto-electronics integrated circuit (OEIC) using statisticalexperimental design techniques

摘要

Focuses on developing a manufacturable, robust, ion implanted 0.6μm GaAs metal-semiconductor field-effect transistor (MESFET) andmetal-semiconductor-metal (MSM) based optoelectronic integrated circuitprocess. Our approach is to represent the OEIC process as theintegration of key process modules. Each process module has well defineddesign parameters and statistically significant transfercharacteristics. The statistically significant transfer characteristicsof each process module were obtained through design of experiment (DOE)and response surface modeling (RSM), through the use of bothexperimental data and calibrated process simulators. These transfercharacteristics are used to determine the process optimum, consideringdesign for manufacturability (DFM). The mapping of random processvariations onto device variations, are realized by these transfercharacteristics and used for statistical circuit design formanufacturability. Therefore, the process yield can be enhanced at boththe circuit design and the process design levels. The process capability(Cp) is assessed by these modules' transfer characteristics, as well;thus manufacturability can be incorporated into the early stage ofprocess development. As a result, high yield OEIC transmitter andreceiver chips with data transmission rates above 1 Gbit/sec have beenachieved