Computer aided analysis of ESD effects in dual gate MOSFET VHFamplifier

摘要

The authors present a computer-aided analysis model for theprediction of the response of a dual gate MOSFET VHF amplifier toelectrostatic discharge (ESD) induced transient electromagnetic (EM)fields. With the help of the frequency spectrum of ESD generatedelectric field, the frequency-dependent y-parameter set for the device,and the antenna parameters, the model predicts the time-domain responsefor a given tuned frequency and bandwidth of the VHF amplifier. Itappears that the amplifier responds at its tuned frequency during thesteep rising edge of the electric field. The amplitude of responsedecreases sharply with increase in distance from the ESD source