COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs

摘要

The two-dimensional numerical simulation of energy transport for MOSFETs ispresented,in which the effect of generation,recombination and temperature gradient of carrierson the characteristics of devices are considered.An improved mobility model is also proposed.The numerical results of micron and submicron MOSFETs show that the present model fitsexperiment very well.