Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group

摘要

Abstract: A new type of polymerization system for phenolic resin is proposed for high performance positive-working i-line photoresists used for sub-quarter micron lithography. A new design of phenolic resin is also proposed. The effects of end group of phenolic resin are mainly discussed from the standpoint of the dissolution characteristics of the photoresist and their lithographic performances; the resolution of 0.20 $mu@m (1L/1.5S) on BARC with an annular illumination aperture (NA $EQ 0.57, 2.3 $sigma $EQ 0.70).!14