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Advances in Resist Technology and Processing XV

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1.Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method

机译：基于可裂解脂环族基团和吸收带移法的化学放大ArF抗蚀剂
- 作者：Naomi Shida;Toshiba Corp.;Saiwai-ku Kawasaki;Japan;Takeshi Okino;Toshiba Corp.;Saiwai-ku Kawasaki;Japan;Koji Asakawa;Toshiba Corp.;Saiwai-ku Kawasaki;Japan;Tohru Ushirogouchi;Toshiba Corp.;Saiwai-ku Kawasaki;Japan;Makoto Nakase;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
2.Choice of amines as stabilizers for chemically amplified resist systems

机译：选择胺作为化学放大抗蚀剂系统的稳定剂
- 作者：Lawrence Ferreira;Olin Microelectronic Materials;Inc.;East Providence;RI;USA;Sanjay Malik;Olin Microelectronic Materials;Inc.;E Providence;RI;USA;Thomas R. Sarubbi;Olin Microelectronic Materials;Inc.;East Providence;RI;USA;Andrew J. Blakeney;Olin Microelectronic Materials;Inc.;East Providence;RI;USA;Brian Maxwell;Olin Microelectronic Materials;Inc.;E Providence;RI;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
3.Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists

机译：高活化能和低活化能深紫外光致抗蚀剂的关键参数比较
- 作者：Will Conley;Cypress Semiconductor Corp.;San Jose;CA;USA;Carl P. Babcock;Cypress Semiconductor Corp.;San Jose;CA;USA;Nigel R. Farrar;Hewlett-Packard Co.;Palo Alto;CA;USA;Hua-Yu Liu;Hewlett-Packard Co.;Austin;TX;USA;Bill Peterson;JSR Microelectronics;Inc.;Santa Clara;CA;USA;Kazuo Taira;JSR Microelectronics;Inc.;Asao-ku;Kawasaki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
4.Design of an etch-resistant cyclic olefin photoresist

机译：耐腐蚀环烯烃光刻胶的设计
- 作者：Robert D. Allen;IBM Almaden Research Ctr.;San Jose;CA;USA;Juliann Opitz;IBM Almaden Research Ctr.;San Jose;CA;USA;Thomas I. Wallow;IBM Almaden Research Ctr.;San Jose;CA;USA;Richard A. DiPietro;IBM Almaden Research Ctr.;San Jose;CA;USA;Donald C. Hofer;IBM Almaden Research Ctr.;San Martin;CA;USA;Saikumar Jayaraman;BF Goodrich;Brecksville;OH;USA;Karen A. Hullihan;BF Goodrich;Brecksville;OH;USA;Larry F. Rhodes;BF Goodrich;Brecksville;OH;USA;Brian L. Goodall;BF Goodrich;Brecksville;OH;USA;Robert A. Shick;BF Goodrich;Brecksville;OH;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
5.Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group

机译：具有亚微米级光刻能力的i-line光致抗蚀剂的设计：端基受控的新型酚醛树脂的作用
- 作者：Katsuji Douki;Japan Synthetic Rubber Corp.;Yokkaichi Mie;Japan;Toru Kajita;Japan Synthetic Rubber Corp.;Yokkaichi Mie;Japan;Shin-Ichiro Iwanaga;Japan Synthetic Rubber Corp.;Yokkaichi Mie;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
6.Dissolution of phenolic polymers in aqueous base: the influence of polymer structure

机译：酚醛聚合物在水性碱中的溶解：聚合物结构的影响
- 作者：Christopher L. McAdams;Univ. of Texas/Austin;Austin;TX;USA;Lewis W. Flanagin;Univ. of Texas/Austin;Austin;TX;USA;Clifford L. Henderson;Univ. of Texas/Austin;Austin;TX;USA;Adam R. Pawlowski;Univ. of Texas/Austin;Austin;TX;USA;Pavlos C. Tsiartas;Univ. of Texas/Austin;Austin;TX;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
7.Effect of resin molecular weight on novolak dissolution

机译：树脂分子量对酚醛清漆溶解的影响
- 作者：Hsiao-Yi Shih;Polytechnic Univ.;Brooklyn;NY;USA;Huifang Zhuang;Polytechnic Univ.;Brooklyn;NY;USA;Arnost Reiser;Polytechnic Univ.;Brooklyn;NY;USA;Paula M. Gallagher-Wetmore;Phasex Corp.;Lawrence;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
8.Effects of structural differences in speed enhancers (dissolution promoters) on positive photoresist composition

机译：速度增强剂（溶解促进剂）的结构差异对正性光刻胶组成的影响
- 作者：Michelle M. Cook;Clariant Corp.;Somerville;NJ;USA;M. Dalil Rahman;Clariant Corp.;Somerville;NJ;USA;Ping-Hung Lu;Clariant Corp.;Bridgewater;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
9.Effects of underlayer on performance of bilayer resists for 248-nm lithography

机译：底层对248 nm光刻双层抗蚀剂性能的影响
- 作者：Katherina Babich;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Alessandro Callegari;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Karen E. Petrillo;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;John P. Simons;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Douglas LaTulipe;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Marie Angelopoulos;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Qinghuang Lin;IBM Microelectronics Div.;Hopewell Jct;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
10.Feasibility of a CVD-resist-based lithography process at 193-nm wavelength

机译：在193 nm波长下进行基于CVD抗蚀剂的光刻工艺的可行性
- 作者：Carol Y. Lee;Intel Corp.;Santa Clara;CA;USA;Siddhartha Das;Intel Corp.;Santa Clara;CA;USA;John Yang;Intel Corp.;Santa Clara;CA;USA;Timothy W. Weidman;Applied Materials;Santa Clara;CA;USA;Dian Sugiarto;Applied Materials;Santa Clara;CA;USA;Mike Nault;Applied Materials;Santa Clara;CA;USA;David Mui;Applied Materials;Santa Clara;CA;USA;Zoe A. Osborne;Applied Materials;Santa Clara;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
11.Influence of salting-out effect in ArF resist development

机译：盐析效应对ArF抗蚀剂显影的影响
- 作者：Yasuhiro Yoshida;Mitsubishi Electric Corp.;Anagaski Hyogo;Japan;Teruhiko Kumada;Mitsubishi Electric Corp.;Amagasaki Hyogo;Japan;Atsuko Sasahara;Mitsubishi Electric Corp.;Anagaski Hyogo;Japan;Atsushi Oshida;Mitsubishi Electric Corp.;Anagaski Hyogo;Japan;Hiroshi Adachi;Mitsubishi Electric Corp.;Amagasaki Hyogo;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
12.Line-edge roughness in sub-0.18-um resist patterns

机译：0.18um以下抗蚀剂图案中的线边缘粗糙度
- 作者：Susan C. Palmateer;MIT Lincoln Lab.;Lexington;MA;USA;Susan G. Cann;MIT Lincoln Lab.;Lexington;MA;USA;Jane E. Curtin;MIT Lincoln Lab.;Lexington;MA;USA;Scott P. Doran;MIT Lincoln Lab.;Lexington;MA;USA;Lynn M. Eriksen;MIT Lincoln Lab.;Lexington;MA;USA;Anthony R. Forte;MIT Lincoln Lab.;Lexington;MA;USA;Roderick R. Kunz;MIT Lincoln Lab.;Lexington;MA;USA;Theodore M. Lyszczarz;MIT Lincoln Lab.;Lexington;MA;USA;Margaret B. Stern;MIT Lincoln Lab.;Lexington;MA;USA;Carla M. Nelson;Motorola;SEMATECH;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
13.Lithographic evaluation of a new high-performance photoresist composition

机译：新型高性能光刻胶组合物的光刻评估
- 作者：Warren Montgomery;LSI Logic Corp.;Gresham;OR;USA;Neal Callan;LSI Logic Corp.;Gresham;OR;USA;Alan Kozlowski;Sumitomo Chemical America;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
14.Negative-type chemically amplified resists for ArF excimer laser lithography

机译：用于ArF准分子激光光刻的负型化学放大抗蚀剂
- 作者：Takuya Naito;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Makoto Takahashi;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Takeshi Ohfuji;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Masaru Sasago;Association of Super-Advanced Electronics Technologie s;Yokohama-shi Kanagawa;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
15.New water-processable chemically amplified resists: three steps two tones one solvent

机译：新型水处理化学放大型抗蚀剂：三步两色一种溶剂
- 作者：Graham D. Darling;Active Materials Inc.;Ottawa;ON;Canada;Alexander M. Vekselman;AIM Co.;Montreal East;QC;Canada;Shintaro Yamada;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
16.Advanced complementary color filter technology without dyeing process for CCD image sensors

机译：先进的互补滤色镜技术，无需对CCD图像传感器进行染色处理
- 作者：Hiromitsu Aoki;Matsushita Electronics Corp.;Minami-ku Kyoto;Japan;Kenji Yokozawa;Matsushita Electronics Corp.;Kyoto;Japan;Nobuyuki Waga;Matsushita Electronics Corp.;Kyoto;Japan;Tomoko Ohtagaki;Matsushita Electronics Corp.;Kyoto;Japan;Yoshiaki Nishi;Matsushita Electronics Corp.;Kyoto;Japan;Hirotatsu Kodama;Matsushita Electronics Corp.;Kyoto;Japan;Yoshikazu Sano;Matsushita Electronics Corp.;Minami-ku Kyoto;Japan;Sumio Terakawa;Matsushita Electronics Corp.;Minami-ku;Kyoto;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
17.Novel single-layer photoresist containing cycloolefins for 193 nm

机译：新型含环烯烃的单层光刻胶，波长为193 nm
- 作者：Joo-Hyeon Park;Korea Kumho Petrochemical Co.;Ltd.;Taejun-City;South Korea;Dong-Chul Seo;Korea Kumho Petrochemical Co.;Ltd.;Daejun-City;South Korea;Ki-Dae Kim;Korea Kumho Petrochemical Co.;Ltd.;Taejeon-City;South Korea;Sun-Yi Park;Korea Kumho Petrochemical Co.;Ltd.;Daejun-City;South Korea;Seong-Ju Kim;Korea Kumho Petrochemical Co.;Ltd.;Taejun-City;South Korea;Hosull Lee;Korea Kumho Petrochemical Co.;Ltd.;Daejun-City;South Korea;Jae-Chang Jung;Hyundai Electronics Industries Co.;Ltd.;Ichon-si Kyoungki-do;South Korea;Cheol-Kyu Bok;Hyundai Electronics Industries Co.;Ltd.;Ichon-si Kyoungki-do;South Korea;Ki-Ho Baik;Hyundai Electronics Industries Co.;Ltd.;Ichon-si;Kyoungki-do;South Korea.
- 会议名称：《Advances in Resist Technology and Processing XV》
18.Novel strategy for the design of highly transparent ArF resists with excellent dry etch resistance

机译：设计具有优异的耐干蚀刻性的高透明ArF抗蚀剂的新颖策略
- 作者：Wenwei Zhao;Osaka Univ.;Osaka;Japan;Takeshi Ohfuji;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Masaru Sasago;Association of Super-Advanced Electronics Technologie s;Yokohama-shi Kanagawa;Japan;Seiichi Tagawa;Osaka Univ.;Osaka;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
19.Photoresist and the photoresist/wafer interface with a local thermal probe

机译：光刻胶和光刻胶/晶圆与局部热探针的界面
- 作者：David S. Fryer;Univ. of Wisconsin/Madison;Stoughton;WI;USA;Juan J. dePablo;Univ. of Wisconsin/Madison;Madison;WI;USA;Paul F. Nealey;Univ. of Wisconsin/Madison;Madison;WI;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
20.Polymer design in surface modification resist process for ArF lithography

机译：用于ArF光刻的表面改性抗蚀剂工艺中的聚合物设计
- 作者：Takahiro Matsuo;Association for Super-Advanced Electronics Technologi es;Yokohama Kanagawa;Japan;Masayuki Endo;Association for Super-Advanced Electronics Technologi es;Yokohama Kanagawa;Japan;Shigeyasu Mori;Association for Super-Advanced Electronics Technologi es;Yokohama Kanagawa;Japan;Koichi Kuhara;Association for Super-Advanced Electronics Technologi es;Yokohama Kanagawa;Japan;Masaru Sasago;Association for Super-Advanced Electronics Technologi es;Yokohama-shi Kanagawa;Japan;Masamitsu Shirai;Osaka Prefecture Univ.;Sakai Osaka;Japan;Masahiro Tsunooka;Osaka Prefecture Univ.;Sakai Osaka;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
21.Positive- and negative-tone water-processable photoresists: a progress report

机译：正负水可加工光刻胶：进度报告
- 作者：Shintaro Yamada;Univ. of Texas/Austin;Austin;TX;USA;David R. Medeiros;Univ. of Texas/Austin;Austin;TX;USA;Kyle Patterson;Univ. of Texas/Austin;Austin;TX;USA;Wei-Lun K. Jen;Univ. of Texas/Austin;Austin;TX;USA;Timo Rager;Univ. of Texas/Austin;Austin;TX;USA;Qinghuang Lin;Univ. of Texas/Austin;Hopewell Jct;NY;USA;Carlos Lenci;Univ. of Texas/Austin;Orlando;FL;USA;Jeffrey D. Byers;SEMATECH;Austin;TX;USA;Jennifer M. Havard;Univ. of California/Berkeley;Univ of Calif;CA;USA;Dario Pasini;Univ. of California/Berkeley;Berkeley;CA;USA;Jean M. Frechet;Univ. of California/Berkeley;Berkeley;CA;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
22.Structural basis for high thermal stability of a resist

机译：抗蚀剂高热稳定性的结构基础
- 作者：Sanjay Malik;Olin Microelectronic Materials;Inc.;E Providence;RI;USA;Andrew J. Blakeney;Olin Microelectronic Materials;Inc.;East Providence;RI;USA;Lawrence Ferreira;Olin Microelectronic Materials;Inc.;East Providence;RI;USA;Medhat A. Toukhy;Olin Microelectronic Materials;Inc.;North Kingstown;RI;USA;John Ferri;Olin Microelectronic Materials;Inc.;East Providence;RI;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
23.Synthesis of diazonaphthoquinone (DNQ) photoactive compounds (PACs) using ion exchange resins

机译：使用离子交换树脂合成重氮萘醌（DNQ）光敏化合物（PAC）
- 作者：Joseph E. Oberlander;Clariant Corp.;Branchburg;NJ;USA;Ellie Gonzalez;Clariant Corp.;Branchburg;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
24.Compatibility of chemically amplified photoresists with bottom antireflective coatings

机译：化学放大的光致抗蚀剂与底部抗反射涂层的相容性
- 作者：Hiroshi Yoshino;NEC Corp.;Sagamihara Kanagawa;Japan;Toshiro Itani;NEC Corp.;Sagamihara Kanagawa;Japan;Shuichi Hashimoto;NEC Corp.;Sagamihara Kanagawa;Japan;Mitsuharu Yamana;NEC Corp.;Sagamihara Kanagawa;Japan;Tsuyoshi Yoshii;NEC Corp.;Sagamihara Kanagawa;Japan;Hiroyoshi Tanabe;NEC Corp.;Sagamihara;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
25.Computational and experimental study of spin coater air flow

机译：旋涂机气流的计算与实验研究
- 作者：Xiaoguang Zhu;FSI International;Inc.;Allen;TX;USA;Faqiu Liang;FSI International;Inc.;Allen;TX;USA;A.Haji-Sheikh;Univ. of Texas/Arlington;Arlington;TX;USA;N.Ghariban;Univ. of Texas/Arlington;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
26.Deblocking reaction of chemically amplified ArF positive resists

机译：化学放大的ArF正性抗蚀剂的解封反应
- 作者：Mitsuharu Yamana;NEC Corp.;Sagamihara Kanagawa;Japan;Toshiro Itani;NEC Corp.;Sagamihara Kanagawa;Japan;Hiroshi Yoshino;NEC Corp.;Sagamihara Kanagawa;Japan;Shuichi Hashimoto;NEC Corp.;Sagamihara Kanagawa;Japan;Hiroyoshi Tanabe;NEC Corp.;Sagamihara;Japan;Kunihiko Kasama;NEC Corp.;Sagamihara-shi Kanagawa;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
27.Design and study of water-soluble positive- and negative-tone imaging materials

机译：水溶性正负成像材料的设计与研究
- 作者：Jennifer M. Havard;Univ. of California/Berkeley;Univ of Calif;CA;USA;Dario Pasini;Univ. of California/Berkeley;Berkeley;CA;USA;Jean M. Frechet;Univ. of California/Berkeley;Berkeley;CA;USA;David R. Medeiros;Univ. of Texas/Austin;Austin;TX;USA;Kyle Patterson;Univ. of Texas/Austin;Austin;TX;USA;Shintaro Yamada;Univ. of Texas/Austin;Austin;TX;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
28.Discrimination enchancement in polysilsesquioxane-based positive resists for ArF lithography

机译：用于ArF光刻的基于聚倍半硅氧烷的正性光刻胶的分辨力增强
- 作者：Jun Hatakeyama;Shin-Etsu Chemical Co.;Ltd.;Nakakubiki Niigata;Japan;M.Nakashima;Shin-Etsu Chemical Co.;Ltd.;Nakakubiki Niigata;Japan;I.Kaneko;Shin-Etsu Chemical Co.;Ltd.;Nakakubiki Niigata;Japan;S.Nagura;Shin-Etsu Chemical Co.;Ltd.;Nakakubiki Niigata;Japan;T.Ishihara;Shin-Etsu Chemical Co.;Ltd.;Nakakubiki;Niigata;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
29.Dual-wavelength photoresist for sub-200-nm lithography

机译：用于200纳米以下光刻的双波长光刻胶
- 作者：Stefan Hien;Siemens AG;Erlangen;Germany;Guenther Czech;Siemens AG;Muenchen;Germany;Wolf-Dieter Domke;Siemens AG;Erlangen;Germany;Hans Raske;Siemens AG;Muenchen;Germany;Michael Sebald;Siemens AG;Erlangen;Germany;Iris Stiebert;Siemens AG;Erlangen;Germany.
- 会议名称：《Advances in Resist Technology and Processing XV》
30.Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography

机译：通过减小KrF准分子激光光刻的抗蚀剂厚度来提高工艺范围
- 作者：Masafumi Asano;Toshiba Corp.;Isogoku Yokohama;Japan;Yumiko Maruyama;Toshiba Corp.;Isogoku Yokohama;Japan;Toru Koike;Toshiba Corp.;Isogoku Yokohama;Japan;Kenji Chiba;Toshiba Corp.;Isogoku Yokohama;Japan;Eishi Shiobara;Toshiba Corp.;Isogoku Yokohama;Japan;Takahiro Ikeda;Toshiba Corp.;Yokohama;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
31.Material design and lithographic performance of novel hydroxystyrene copolymer-based DUV negative resists

机译：新型基于羟基苯乙烯共聚物的DUV负性抗蚀剂的材料设计和光刻性能
- 作者：Takanori Kudo;Clariant Japan K.K.;Ogasagun;Japan;Kayo Aramaki;Clariant Japan K.K.;Kawagoe Saitama;Japan;Seiya Masuda;Clariant Japan K.K.;Ogasagun;Japan;Georg Pawlowski;Clariant Japan K.K.;Ogasagun;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
32.Monitoring and controlling synthesis of bottom antireflective coating materials by in-situ FT-IR technique

机译：底部FT-IR技术监测和控制底部抗反射涂料的合成
- 作者：Shuji Ding;Clariant Corp.;Somerville;NJ;USA;Jianhui Shan;Clariant Corp.;Branchburg;NJ;USA;Dinesh N. Khanna;Clariant Corp.;Branchburg;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
33.Monitoring photoacid generation in chemically amplified resist systems

机译：监控化学放大抗蚀剂系统中光酸的产生
- 作者：Uzodinma Okoroanyanwu;Univ. of Texas/Austin;Sunnyvale;CA;USA;Jeffrey D. Byers;SEMATECH;Austin;TX;USA;Ti Cao;Univ. of Texas/Austin;Austin;TX;USA;Stephen E. Webber;Univ. of Texas/Austin;Austin;TX;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
34.Novel novolak block copolymers for advanced i-line resists

机译：用于高级i-line抗蚀剂的新型酚醛清漆嵌段共聚物
- 作者：Stanley F. Wanat;Clariant Corp.;Somerville;NJ;USA;M. Dalil Rahman;Clariant Corp.;Somerville;NJ;USA;Sunit S. Dixit;Clariant Corp.;Flemington;NJ;USA;Ping-Hung Lu;Clariant Corp.;Bridgewater;NJ;USA;Douglas S. McKenzie;Clariant Corp.;Somerville;NJ;USA;Michelle M. Cook;Clariant Corp.;Somerville;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
35.Optimization of optical parameters for a critical i-line resist system

机译：关键i线抗蚀剂系统的光学参数优化
- 作者：Rosemary Bell;Shipley Co. Inc.;Marlborough;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
36.Process effects resulting from conversion to a safe-solvent organic BARC

机译：转换为安全溶剂的有机BARC产生的过程效果
- 作者：James C. Cox;Texas Instruments Inc.;Dallas;TX;USA;Lynn Welsh;Texas Instruments Inc.;Dallas;TX;USA;Deborah Murphy;Texas Instruments Inc.;Dallas;TX;USA;Ronald J. Eakin;Clariant Corp.;Dallas;TX;USA;Pierre Silvestre;Clariant Corp.;Dallas;TX;USA;Ralph R. Dammel;Clariant Corp.;Somerville;NJ;USA;Shuji Ding;Clariant Corp.;Somerville;NJ;USA;Brad Williams;Clariant Corp.;Dallas;TX;USA;Dinesh N. Khanna;Clariant Corp.;Branchburg;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
37.Progress in 193-nm top-surface imaging process development

机译：193 nm顶面成像工艺开发进展
- 作者：John M. Hutchinson;Intel Corp.;Santa Clara;CA;USA;Veena Rao;Intel Corp.;Santa Clara;CA;USA;Guojing Zhang;Intel Corp.;Santa Clara;CA;USA;Adam Pawloski;Intel Corp.;Santa Clara;CA;USA;Carlos A. Fonseca;Intel Corp.;Rochester;NY;USA;Janet Chambers;Intel Corp.;Santa Clara;CA;USA;Susan M. Holl;Intel Corp.;Santa Clara;CA;USA;Siddhartha Das;Intel Corp.;Santa Clara;CA;USA;Craig C. Henderson;Sandia National Labs.;Livermore;CA;USA;David R. Wheeler;Sandia National Labs.;Albuquerque;NM;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
38.Resist edge roughness with reducing pattern size

机译：减少边缘粗糙度，减小图案尺寸
- 作者：Eishi Shiobara;Toshiba Corp.;Isogoku Yokohama;Japan;Daisuke Kawamura;Toshiba Corp.;Yokohama;Japan;Kentaro Matsunaga;Toshiba Corp.;Isogoku Yokohama;Japan;Toru Koike;Toshiba Corp.;Isogoku Yokohama;Japan;Shoji Mimotogi;Toshiba Corp.;Isogoku Yokohama;Japan;Tsukasa Azuma;Toshiba Corp.;Isogoku Yokohama;Japan;Yasunobu Onishi;Toshiba Corp.;Isogoku Yokohama;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
39.Some aspects of thick-film resist performance and modeling

机译：厚膜抗蚀剂性能和建模的某些方面
- 作者：Andreas Erdmann;Fraunhofer-Institute for Silicon Technology;Itzehoe;Germany;Clifford L. Henderson;Univ. of Texas/Austin;Austin;TX;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA;Ralph R. Dammel;Clariant Corp.;Somerville;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
40.Can sub-0.18-um FEOL be realized in production with KrF DUV?

机译：用KrF DUV能否在生产中实现小于0.18um的FEOL？
- 作者：Wendy Gehoel-van Ansem;Philips Research Labs.;Eindhoven;Netherlands;Peter Zandbergen;Philips Research Labs.;Eindhoven;Netherlands;Jos de Klerk;Philips Semiconductors;Nijmegen;Netherlands.
- 会议名称：《Advances in Resist Technology and Processing XV》
41.Deposition of trace metals to a wafer surface from lithography materials

机译：用光刻材料将痕量金属沉积到晶片表面
- 作者：Rob W. Ramage;Intel Corp.;Hillsboro;OR;USA;Rita Vos;IMEC;Leuven;Belgium;Marc Meuris;IMEC;Leuven;Belgium;Marcel Lux;IMEC;Liuven;Belgium.
- 会议名称：《Advances in Resist Technology and Processing XV》
42.Diffusion of photoacid generators by laser scanning confocal microscopy

机译：激光扫描共聚焦显微镜对光产酸剂的扩散
- 作者：Ping L. Zhang;LSI Logic Inc.;Santa Clara;CA;USA;Stephen E. Webber;Univ. of Texas/Austin;Austin;TX;USA;J.Mendenhall;Univ. of Texas/Austin;Austin;TX;USA;Jeffrey D. Byers;SEMATECH;Austin;TX;USA;Keith K. Chao;LSI Logic Inc.;Santa Clara;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
43.Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates

机译：在等离子增强ARL（PE ARL）SiON衬底上减少正型深紫外光致抗蚀剂的影响
- 作者：Lori A. Joesten;Shipley Co. Inc.;Marlborough;MA;USA;Matthew L. Moynihan;Shipley Co. Inc.;Marlborough;MA;USA;Tracy K. Lindsay;Shipley Co. Inc.;Marlborough;MA;USA;Michael Reilly;Shipley Co. Inc.;Marlborough;MA;USA;Kathy Konjuh;Novellus Systems;Inc.;San Jose;CA;USA;David Mordo;Novellus Systems;Inc.;San Jose;CA;USA;Kenneth P. MacWilliams;Novellus Systems;Inc.;San Jose;CA;USA;Srini Sundararajan;Novellus Systems;Inc.;San Jose;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
44.Improved positive surface modification resist process for 193-nm lithography

机译：改进的用于193 nm光刻的正表面改性抗蚀剂工艺
- 作者：Masayuki Endo;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Takahiro Matsuo;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Shigeyasu Mori;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Taku Morisawa;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Koichi Kuhara;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Masaru Sasago;Association of Super-Advanced Electronics Technologie s;Yokohama-shi Kanagawa;Japan;Masamitsu Shirai;Osaka Prefecture Univ.;Sakai Osaka;Japan;Masahiro Tsunooka;Osaka Prefecture Univ.;Sakai Osaka;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
45.Method to measure ethylene oxide/propylene oxide surfactants in resist developers

机译：光刻胶显影剂中环氧乙烷/环氧丙烷表面活性剂的测定方法
- 作者：Rodica Holt;Clariant Corp.;Branchburg;NJ;USA;Joseph E. Oberlander;Clariant Corp.;Branchburg;NJ;USA;Maria Fides Y. Calindas;Clariant Corp.;Branchburg;NJ;USA;Ellie Gonzalez;Clariant Corp.;Branchburg;NJ;USA;Pilarcita L. Ranque;Clariant Corp.;Branchburg;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
46.Modeling parameter extraction for DNQ-novolak thick film resists

机译：DNQ-novolak厚膜抗蚀剂的建模参数提取
- 作者：Clifford L. Henderson;Univ. of Texas/Austin;Austin;TX;USA;Steven A. Scheer;Univ. of Texas/Austin;Austin;TX;USA;Pavlos C. Tsiartis;Univ. of Texas/Austin;Austin;TX;USA;Ben M. Rathsack;Univ. of Texas/Austin;Austin;TX;USA;John P. Sagan;Clariant Corp.;Somerville;NJ;USA;Ralph R. Dammel;Clariant Corp.;Somerville;NJ;USA;Andreas Erdmann;Fraunhofer-Institute for Silicon Technology;Itzehoe;Germany;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
47.Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists

机译：酸敏感的芳基醚保护的聚（4-羟基苯乙烯）衍生物，用于化学放大的深紫外线正性抗蚀剂
- 作者：Pushkara R. Varanasi;IBM Microelectronics Div.;Hopewell Jct;NY;USA;Kathleen M. Cornett;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Ahmad D. Katnani;IBM Microelectronics Div.;Hopewell Jct;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
48.Novolak resin for ultrafast high-resolution positive i-line photoresist compositions

机译：用于超快高分辨率正i线光刻胶组合物的Novolak树脂
- 作者：M. Dalil Rahman;Clariant Corp.;Somerville;NJ;USA;Ping-Hung Lu;Clariant Corp.;Bridgewater;NJ;USA;Michelle M. Cook;Clariant Corp.;Somerville;NJ;USA;Woo-Kyu Kim;Clariant Corp.;Somerville;NJ;USA;Dinesh N. Khanna;Clariant Corp.;Branchburg;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
49.Photoacid generation in chemically amplified resists: elucidation of structural effects of photoacid generators using new acid-sensitive dyes for monitoring acid generation

机译：化学放大抗蚀剂中的光酸产生：使用新型酸敏感染料监测酸产生来阐明光酸产生剂的结构效应
- 作者：James F. Cameron;Shipley Co. Inc.;Marlborough;MA;USA;J. Michael Mori;Shipley Co. Inc.;Marlborough;MA;USA;Thomas M. Zydowsky;Shipley Co. Inc.;Marlborough;MA;USA;Doris Kang;Shipley Co. Inc.;Marlborough;MA;USA;Roger F. Sinta;Shipley Co. Inc.;Marlborough;MA;USA;Matt King;Shipley Co. Inc.;Marlborough;MA;USA;Juan C. Scaiano;Univ. of Ottawa;Ottawa;ON;Canada;Gerd Pohlers;Univ. of Ottawa;Ottawa;ON;Canada;Susan Virdee;Univ. of Ottawa;Ottawa;ON;Canada;Terry Connolly;Univ. of Ottawa;Ottawa;ON;Canada.
- 会议名称：《Advances in Resist Technology and Processing XV》
50.Photoacid generators in chemically amplified resists

机译：化学放大抗蚀剂中的光酸产生剂
- 作者：Yasuhiro Suzuki;Toyo Gosei Co.;Ltd.;Inba-Gun;Japan;Donald W. Johnson;MicroChem Corp.;Newton;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
51.Processing of acrylate-based 193-nm resists: influence of physico-chemical properties

机译：丙烯酸酯基193 nm抗蚀剂的加工：物理化学性质的影响
- 作者：Benedicte P. Mortini;SGS-Thomson Microelectronics;Crolles Cedex;France;Charles Rosilio;CEA-CENS;Gif sur Yvette Cedex;France;Alain Prola;France Telecom/CNET;Meylan Cedex;France;Patrick J. Paniez;France Telecom/CNET;Meylan Cedex;France.
- 会议名称：《Advances in Resist Technology and Processing XV》
52.Resin fractionation effect for photoresist performance

机译：树脂分馏效应对光刻胶性能的影响
- 作者：Tatsuya Yamada;Nagase Electronic Chemicals Ltd.;Hyogo;Japan;Yutaka Saito;Nagase Electronic Chemicals Ltd.;Hyogo;Japan;Kunio Itoh;Nagase Electronic Chemicals Ltd.;Hyogo;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
53.Resist cluster formation model and development simulation

机译：抵抗团簇形成模型与开发模拟
- 作者：Kazuya Kamon;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Keisuke Nakazawa;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Atsuko Yamaguchi;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Nobuyoki N. Matsuzawa;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Takeshi Ohfuji;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Masaru Sasago;Association of Super-Advanced Electronics Technologie s;Yokohama-shi Kanagawa;Japan;Ken ichi Kanzaki;Osaka Univ.;Osaka;Japan;Seiichi Tagawa;Osaka Univ.;Osaka;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
54.Study of bake mechanisms by real-time in-situ ellipsometry

机译：实时原位椭偏仪研究烘烤机理
- 作者：Patrick J. Paniez;France Telecom/CNET Grenoble;Meylan Cedex;France;Aime Vareille;France Telecom/CNET Grenoble;Meylan Cedex;France;Patrice Ballet;France Telecom/CNET Grenoble;Meylan Cedex;France;Benedicte P. Mortini;SGS-Thomson Microelectronics;Crolles Cedex;France.
- 会议名称：《Advances in Resist Technology and Processing XV》
55.Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography

机译：用于193 nm光刻的含硅的甲基丙烯酸酯基双层抗蚀剂的热稳定性
- 作者：Daniela White;PPG Industries;Inc.;E Providence;RI;USA;Bernard T. Beauchemin;Jr.;Olin Microelectronic Materials;Inc.;East Providence;RI;USA;Andrew J. Blakeney;Olin Microelectronic Materials;Inc.;East Providence;RI;USA;Thomas Steinhaeusler;Olin Microelectronic Materials;Inc.;E Providence;RI;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
56.Top surface imaging through silylation

机译：甲硅烷基化的顶面成像
- 作者：Sergei V. Postnikov;Univ. of Texas/Austin;Austin;TX;USA;Mark H. Somervell;Univ. of Texas/Austin;Austin;TX;USA;Clifford L. Henderson;Univ. of Texas/Austin;Austin;TX;USA;Steven Katz;Univ. of Texas/Austin;Austin;TX;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA;Jeffrey D. Byers;SEMATECH;Austin;TX;USA;Anwei Qin;LSI Logic;Inc.;Gresham;OR;USA;Qinghuang Lin;IBM Microelectronics Div.;Hopewell Jct;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
57.Water-castable bottom antireflective coatings

机译：水铸底抗反射涂料
- 作者：Ping-Hung Lu;Clariant Corp.;Bridgewater;NJ;USA;Salem Mehtsun;Clariant Corp.;Branchburg;NJ;USA;John P. Sagan;Clariant Corp.;Somerville;NJ;USA;Ralph R. Dammel;Clariant Corp.;Somerville;NJ;USA;Iain A. McCulloch;Hoechst Research;Technology;Glasgow Strathclyde;United Kingdom;Ming Kang;Hoechst Research;Technology;Summit;NJ;USA;Hatsuyuki Tanaka;Clariant Japan K.K.;Ogasagun;Japan;Ken Kimura;Clariant Japan K.K.;Ogasagun;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
58.Chemical and lithographic aspects of organic deep-UV BARCs

机译：有机深紫外BARC的化学和光刻方面
- 作者：Munirathna Padmanaban;Clariant Japan K.K.;Somerville;NJ;USA;Wen-Bin Kang;Clariant Japan K.K.;Shizuoka-perfecture;Japan;Ken Kimura;Clariant Japan K.K.;Ogasagun;Japan;Yoshino Nishiwaki;Clariant Japan K.K.;Ogasagun;Japan;Georg Pawlowski;Clariant Japan K.K.;Ogasagun;Japan;Hatsuyuki Tanaka;Clariant Japan K.K.;Ogasagun;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
59.Improving the performance of 193-nm photoresists based on alicyclic polymers

机译：改善基于脂环族聚合物的193 nm光刻胶的性能
- 作者：Kyle Patterson;Univ. of Texas/Austin;Austin;TX;USA;Uzodinma Okoroanyanwu;Univ. of Texas/Austin;Sunnyvale;CA;USA;Tsutomu Shimokawa;Univ. of Texas/Austin;Austin;TX;USA;Sungseo Cho;Univ. of Texas/Austin;Austin;TX;USA;Jeffrey D. Byers;SEMATECH;Austin;TX;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
60.Polymer-bound sensitizer in i-line resist formulations

机译：i-line抗蚀剂配方中的聚合物结合敏化剂
- 作者：Premlatha Jagannathan;IBM Microelectronics Div.;Essex Jct;VT;USA;Charlotte DeWan;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Andrew R. Eckert;IBM Microelectronics Div.;Hopewell Jct;NY;USA;Rebecca D. Mih;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Kathleen Martinek;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Charles Richwine;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Leo L. Linehan;IBM Microelectronics Div.;Marlborough;MA;USA;Wayne M. Moreau;IBM Microelectronics Div.;East Fishkill;NY;USA;Randolph S. Smith;IBM Microelectronics Div.;Hopewell Junction;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
61.Characterization of low-viscosity photoresist coating

机译：低粘度光刻胶涂层的表征
- 作者：Murthy S. Krishna;Silicon Valley Group;Inc.;San Jose;CA;USA;John W. Lewellen;Silicon Valley Group;Inc.;San Jose;CA;USA;Gary E. Flores;Silicon Valley Group;Inc.;San Jose;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
62.Development of DUV resist formulations with excellent performance on metal substrates

机译：开发在金属基材上具有优异性能的DUV抗蚀剂配方
- 作者：Martha M. Rajaratnam;Shipley Co. Inc.;Marlborough;MA;USA;James F. Cameron;Shipley Co. Inc.;Marlborough;MA;USA;Jacque H. Georger;Jr.;Shipley Co. Inc.;Holden;MA;USA;Doris Kang;Shipley Co. Inc.;Marlborough;MA;USA;Greg Prokopowicz;Shipley Co. Inc.;Marlborough;MA;USA;Roger F. Sinta;Shipley Co. Inc.;Marlborough;MA;USA;James W. Thackeray;Shipley Co. Inc.;Marlborough;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
63.New model for the effect of developer temperature on photoresist dissolution

机译：显影剂温度对光刻胶溶解影响的新模型
- 作者：Chris A. Mack;Finle Technologies;Inc.;Austin;TX;USA;Mark J. Maslow;Finle Technologies;Inc.;Austin;TX;USA;Atsushi Sekiguchi;Litho Tech Japan;Kawaguchi;Saitama;Japan;Ronald A. Carpio;SEMATECH;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
64.Rapid simulation of silylation and the role of physical mechanisms in profile shapes

机译：硅烷化的快速模拟及其物理机制在轮廓形状中的作用
- 作者：Marco A. Zuniga;Univ. of California/Berkeley;Berkeley;CA;USA;Ebo H. Croffie;Univ. of California/Berkeley;Berkeley;CA;USA;Andrew R. Neureuther;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
65.Design of cycloolefin-maleic-anhydride resist for ArF lithography

机译：ArF光刻用环烯烃-马来酸酐抗蚀剂的设计
- 作者：Jae-Chang Jung;Hyundai Electronics Industries Co.;Ltd.;Ichon-si Kyoungki-do;South Korea;Cheol-Kyu Bok;Hyundai Electronics Industries Co.;Ltd.;Ichon-si Kyoungki-do;South Korea;Ki-Ho Baik;Hyundai Electronics Industries Co.;Ltd.;Ichon-si;Kyoungki-do;South Korea.
- 会议名称：《Advances in Resist Technology and Processing XV》
66.Examination of develop puddle time and its effects on lithographic performance

机译：检查显影水坑时间及其对光刻性能的影响
- 作者：Mark S. Markowski;Shipley Co. Inc.;Marlborough;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
67.Improved simulation of photoresists using new development models

机译：使用新的开发模型改进了光刻胶的仿真
- 作者：Ralph R. Dammel;Clariant Corp.;Somerville;NJ;USA;John P. Sagan;Clariant Corp.;Somerville;NJ;USA;Elaine Kokinda;Clariant Corp.;Somerville;NJ;USA;Neville Eilbeck;Clariant Corp.;Buckingham;United Kingdom;Chris A. Mack;Finle Technologies;Inc.;Austin;TX;USA;Graham G. Arthur;Rutherford Appleton Lab.;Didcot Oxon;United Kingdom;Clifford L. Henderson;Univ. of Texas/Austin;Austin;TX;USA;Steven A. Scheer;Univ. of Texas/Austin;Austin;TX;USA;Ben M. Rathsack;Univ. of Texas/Austin;Austin;TX;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
68.Lithographic evaluation of deep-UV photoresists for 0.25- and 0.18-um technology design rules

机译：根据0.25和0.18um技术设计规则对深紫外光致抗蚀剂进行光刻评估
- 作者：Gilles R. Amblard;CNET/SGS-Thomson;Meylan Cedex;France.
- 会议名称：《Advances in Resist Technology and Processing XV》
69.Advanced ARCH resist

机译：先进的ARCH抗蚀剂
- 作者：N.R. Bantu;Olin Microelectronic Materials;East Providence;RI;USA;J.Marshall;Olin Microelectronic Materials;East Providence;RI;USA;T.Holt;Olin Microelectronic Materials;East Providence;RI;USA;D.Perry;Olin Microelectronic Materials;East Providence;RI;USA;D.Khan;Olin Microelectronic Materials;East Providence;RI;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
70.Optimization and characterization of ultrathick photoresist films

机译：超厚光刻胶膜的优化与表征
- 作者：Warren W. Flack;Ultratech Stepper;Inc.;San Jose;CA;USA;Warren P. Fan;Ultratech Stepper;Inc.;Cupertino;CA;USA;Sylvia White;Ultratech Stepper;Inc.;San Jose;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
71.Photoresist performance evaluation of implant resist systems

机译：植入抗蚀剂系统的光刻胶性能评估
- 作者：David Pritchard;LSI Logic Corp.;Gresham;OR;USA;Warren Montgomery;LSI Logic Corp.;Gresham;OR;USA;James Kimball;LSI Logic Corp.;Santa Clara;CA;USA;Jeff Albelo;Ohka America;Inc.;Cornelius;OR;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
72.Photoresist ultrafiltration optimization

机译：光刻胶超滤优化
- 作者：George Jordhamo;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Ian Melville;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Ann M. Mewherter;IBM Microelectronics Div.;Hopewell Junction;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
73.Sub-0.30-um i-line photoresist: formulation strategy and lithographic characterization

机译：低于0.30um的i-line光致抗蚀剂：配方策略和光刻特性
- 作者：Jaclyn J. Yu;Shipley Co. Inc.;Marlborough;MA;USA;Catherine C. Meister;Shipley Co. Inc.;Marlborough;MA;USA;Gerald Vizvary;Shipley Co. Inc.;Marlborough;MA;USA;Cheng-Bai Xu;Shipley Co. Inc.;Marlborough;MA;USA;Patricia Fallon;Shipley Co. Inc.;Marlboro;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
74.Techniques for the analysis of Cl- ion in TMAH

机译：TMAH中Cl-离子的分析技术
- 作者：Bang-Chein Ho;Industrial Technology Research Institute;Hsinchu;Taiwan;Mong-Ling Chang;Industrial Technology Research Institute;Chutung Hsinchu;Taiwan;Yu-Ping Lin;Industrial Technology Research Institute;Chutung Hsinchu;Taiwan.
- 会议名称：《Advances in Resist Technology and Processing XV》
75.Chemically amplified resist technology for i-line a

机译：i-line a的化学放大抗蚀剂技术
- 作者：Medhat A. Toukhy;Olin Microelectronic Materials;North Kingstown;RI;USA;Sanjay Malik;Olin Microelectronic Materials;E Providence;RI;USA;Andrew J. Blakeney;Olin Microelectronic Materials;East Providence;RI;USA;Karin R. Schlicht;Olin Microelectronic Materials;East Providence;RI;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
76.Novel a

机译：小说一
- 作者：Mark A. Spak;Clariant Corp.;Somerville;NJ;USA;Fred Mohr;Clariant Corp.;Somerville;NJ;USA;Ronald Bradbury;Clariant Corp.;Raleigh;NC;USA;Ralph R. Dammel;Clariant Corp.;Somerville;NJ;USA;Jason W. Weigold;Univ. of Michigan;Ann Arbor;MI;USA;Stella W. Pang;Univ. of Michigan;Ann Arbor;MI;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
77.Novolak resin analogs for resist a

机译：用于抗蚀剂的酚醛清漆树脂类似物
- 作者：Stanley F. Wanat;Clariant Corp.;Somerville;NJ;USA;Kathryn H. Jensen;Clariant Corp.;Edison;NJ;USA;Ping-Hung Lu;Clariant Corp.;Bridgewater;NJ;USA;Douglas S. McKenzie;Clariant Corp.;Somerville;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
78.Effect of processing on surface roughness for a negative-tone chemically amplified resist exposed by x-ray lithography

机译：X射线光刻技术曝光对负性化学放大抗蚀剂表面粗糙度的影响
- 作者：Geoffrey W. Reynolds;Ctr. for X-ray Lithography/Univ. of Wisconsin-Madison;Stoughton;WI;USA;James W. Taylor;Ctr. for X-ray Lithography/Univ. of Wisconsin-Madison;Stoughton;WI;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
79.Effects of a visualization dye in a thick film photoresist

机译：可视化染料在厚膜光刻胶中的作用
- 作者：Kathryn H. Jensen;Clariant Corp.;Edison;NJ;USA;Stanley A. Ficner;Clariant Corp.;Bethlehem;PA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
80.Lithographic performance of a dry-etch stable methacrylate resist at 193 nm

机译：干法蚀刻稳定的甲基丙烯酸酯抗蚀剂在193 nm的光刻性能
- 作者：Ralph R. Dammel;Clariant Corp.;Somerville;NJ;USA;Stanley A. Ficner;Clariant Corp.;Bethlehem;PA;USA;Joseph E. Oberlander;Clariant Corp.;Branchburg;NJ;USA;A.Klauck-Jacobs;Clariant Corp.;Somerville;NJ;USA;Munirathna Padmanaban;Clariant Corp.;Somerville;NJ;USA;Dinesh N. Khanna;Clariant Corp.;Branchburg;NJ;USA;Dana L. Durham;Clariant Corp.;Somerville;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
81.Acid diffusion in a chemically amplified negative i-line photoresist

机译：化学放大负i线光刻胶中的酸扩散
- 作者：Judy Connolly;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Kuang-Jung R. Chen;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Ranee W. Kwong;IBM Microelectronics Div.;Hopewell Junction;NY;USA;M.Lawson;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Leo L. Linehan;Shipley Co. Inc.;Marlborough;MA;USA;Wayne M. Moreau;IBM Microelectronics Div.;East Fishkill;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
82.Control of acidity of the substrate for precise pattern fabrication using a chemically amplified resist

机译：控制衬底的酸度，以使用化学放大的抗蚀剂进行精确的图案制造
- 作者：Isao Satou;Oki Electric Industry Co.;Ltd.;USA;S.Yabe;Oki Electric Industry Co.;Ltd.;Tokyo;Japan;M.Watanabe;Oki Electric Industry Co.;Ltd.;Tokyo;Japan;Takashi Taguchi;Oki Electric Industry Co.;Ltd.;Tokyo;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
83.Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

机译：含硅的甲基丙烯酸酯基双层抗蚀剂用于193 nm光刻的蚀刻条件的优化
- 作者：Thomas Steinhaeusler;Olin Microelectronic Materials;Inc.;E Providence;RI;USA;Allen H. Gabor;Olin Microelectronic Materials;Inc.;Murray Hill;NJ;USA;Daniela White;Olin Microelectronic Materials;Inc.;E Providence;RI;USA;Andrew J. Blakeney;Olin Microelectronic Materials;Inc.;East Providence;RI;USA;David R. Stark;SEMATECH;Austin;TX;USA;Daniel A. Miller;SEMATECH;Austin;TX;USA;Georgia K. Rich;SEMATECH;Austin;TX;USA;Victoria L. Graffenberg;SEMATECH;Austin;TX;USA;Kim R. Dean;SEMATECH;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
84.Analysis of resist pattern collapse and optimization of DUV process for patterning sub-0.20-um gate line

机译：小于0.20um栅极线的抗蚀剂图案塌陷分析和DUV工艺优化
- 作者：Jeong Y. Yu;LG Semicon Co.;Ltd.;Cheongjusi Chungbuk;South Korea;Goo-Min Jeong;LG Semicon Co.;Ltd.;Cheongjusi Chungbuk;South Korea;Hoon Huh;LG Semicon Co.;Ltd.;Cheongju-si;South Korea;Jaejung Kim;LG Semicon Co.;Ltd.;Cheongju-si;South Korea;Sang-Pyo Kim;LG Semicon Co.;Ltd.;Cheongjusi Chungbuk;South Korea;Jae-Keun Jeong;LG Semicon Co.;Ltd.;Cheongjusi Chungbuk;South Korea;Hong-Seok Kim;LG Semicon Co.;Ltd.;Cheongjusi Chungbuk;South Korea.
- 会议名称：《Advances in Resist Technology and Processing XV》
85.Dissolution-rate analysis of ArF resist polymers based on the percolation model

机译：基于渗流模型的ArF抗蚀剂聚合物的溶解速率分析
- 作者：Atsuko Yamaguchi;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Shinji Kishimura;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Nobuyoki N. Matsuzawa;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Takeshi Ohfuji;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Tomoaki Tanaka;Osaka Univ.;Ibaraki Osaka;Japan;Seiichi Tagawa;Osaka Univ.;Osaka;Japan;Masaru Sasago;Association of Super-Advanced Electronics Technologie s;Yokohama-shi Kanagawa;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
86.Effect of end group on novolak resin properties

机译：端基对酚醛清漆树脂性能的影响
- 作者：Anthony Zampini;Shipley Co. Inc.;Marlborough;MA;USA;Michael J. Monaghan;Shipley Co. Inc.;Marlborough;MA;USA;Cheng-Bai Xu;Shipley Co. Inc.;Marlborough;MA;USA;William J. Cardin;Shipley Co. Inc.;Marlborough;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
87.Effect of the dissolution contrast on process margins in 193-nm lithography

机译：溶出度对比对193 nm光刻工艺裕度的影响
- 作者：Makoto Takahashi;Association of Super-Advanced Electronics Technologie s;Yokohama Kanagawa;Japan;Shinji Kishimura;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Takuya Naito;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Takeshi Ohfuji;Association of Super-Advanced Electronics Technologie s;Yokohama;Japan;Masaru Sasago;Association of Super-Advanced Electronics Technologie s;Yokohama-shi Kanagawa;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
88.Inorganic bottom ARC SiOxNy for interconnection levels on 0.18-um technology

机译：无机底部ARC SiOxNy，用于0.18um技术上的互连级别
- 作者：Yorick Trouiller;CEA-LETI;Grenoble Cedex 9;France;N.Buffet;CEA-LETI;Grenoble Cedex 9;France;Thierry Mourier;CEA-LETI;Grenoble Cedex 9;France;Y.Gobil;CEA-LETI;Grenoble Cedex;France;Patrick Schiavone;France Telecom CNET;Meylan Cedex;France;Y.Quere;CEA-LETI;Grenoble Cedex 9;France.
- 会议名称：《Advances in Resist Technology and Processing XV》
89.Lithographic performance of recent DUV photoresists

机译：最新的DUV光刻胶的光刻性能
- 作者：Bob Streefkerk;ASM Lithography B.V.;Veldhoven;Netherlands;Koen van Ingen Schenau;ASM Lithography B.V.;Veldhoven;Netherlands;Corine Buijk;ASM Lithography B.V.;Veldhoven;Netherlands.
- 会议名称：《Advances in Resist Technology and Processing XV》
90.Negative pattern fabrication using laser exposure of positive photoresist

机译：使用正性光刻胶的激光曝光制作负片图形
- 作者：Boris Kobrin;Rochester Photonics Corp.;Rochester;NY;USA;Colleen Hagen;Rochester Photonics Corp.;Rochester;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
91.Adhesion characteristics of alicyclic polymers for use in ArF excimer laser lithography

机译：ArF准分子激光光刻中脂环族聚合物的粘合特性
- 作者：Kaichiro Nakano;NEC Corp.;Kawasaki-shi Kanagawa;Japan;Shigeyuki Iwasa;NEC Corp.;Kawasaki-shi Kanagawa;Japan;Katsumi Maeda;NEC Corp.;Kawasaki-shi Kanagawa;Japan;Etsuo Hasegawa;NEC Corp.;Kawasaki Kanagawa;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
92.Advance of resist profile control in multilayer resist process for sub-150-nm lithography

机译：低于150nm光刻的多层抗蚀剂工艺中抗蚀剂轮廓控制的进展
- 作者：Yasuki Kimura;OKI Electric Industry Co.;Ltd.;Tokyo;Japan;Hiroyuki Endo;OKI Electric Industry Co.;Ltd.;Tokyo;Japan;Akihiro Endo;OKI Electric Industry Co.;Ltd.;Tokyo;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
93.Advanced negative resists using novel aminoplast crosslinkers

机译：使用新型氨基塑料交联剂的高级负性抗蚀剂
- 作者：A.Afzali;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Jeffrey D. Gelorme;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Laura L. Kosbar;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Mark O. Neisser;IBM Microelectronics Div.;Hopewell Junction;NY;USA;W.Brunswold;IBM Microelectronics Div.;Hopewell Junction;NY;USA;C.Feild;IBM Microelectronics Div.;Hopewell Junction;NY;USA;M.Lawson;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Pushkara R. Varanasi;IBM Microelectronics Div.;Hopewell Jct;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
94.Photoresists using tetrahydropyranyl- and tetrahydrofuranyl-protected styrene maleic anhydride half-ester polymers

机译：使用四氢吡喃基和四氢呋喃基保护的苯乙烯马来酸酐半酯聚合物的光刻胶
- 作者：Wu-Song Huang;IBM Microelectronics Div.;East Fishkill;NY;USA;Ratnam Sooriyakumaran;IBM Almaden Research Ctr.;San Jose;CA;USA;Ranee W. Kwong;IBM Microelectronics Div.;Hopewell Junction;NY;USA;Ahmad D. Katnani;IBM Microelectronics Div.;Hopewell Jct;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
95.Probabilistic model for the mechanism of phenolic polymer dissolution

机译：酚类聚合物溶解机理的概率模型
- 作者：Lewis W. Flanagin;Univ. of Texas/Austin;Austin;TX;USA;Christopher L. McAdams;Univ. of Texas/Austin;Austin;TX;USA;Pavlos C. Tsiartas;Univ. of Texas/Austin;Austin;TX;USA;Clifford L. Henderson;Univ. of Texas/Austin;Austin;TX;USA;William D. Hinsberg;IBM Almaden Research Ctr.;San Jose;CA;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
96.Process and performance optimization of bottom antireflective coatings

机译：底部抗反射涂层的工艺和性能优化
- 作者：Shuji Ding;Clariant Corp.;Somerville;NJ;USA;Ping-Hung Lu;Clariant Corp.;Bridgewater;NJ;USA;Jianhui Shan;Clariant Corp.;Branchburg;NJ;USA;Ellie Gonzalez;Clariant Corp.;Branchburg;NJ;USA;Salem Mehtsun;Clariant Corp.;Branchburg;NJ;USA;Sunit S. Dixit;Clariant Corp.;Flemington;NJ;USA;Dinesh N. Khanna;Clariant Corp.;Branchburg;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
97.Real-time amine monitoring and its correlation to critical dimension control of chemically amplified resists for sub-0.25-um geometries

机译：小于0.25um几何尺寸的实时胺监测及其与化学放大抗蚀剂的临界尺寸控制的相关性
- 作者：Will Conley;Cypress Semiconductor Corp.;San Jose;CA;USA;Carl P. Babcock;Cypress Semiconductor Corp.;San Jose;CA;USA;John A. Lilygren;Cypress Semiconductor Corp.;San Jose;CA;USA;Clifford P. Sandstrom;Cypress Semiconductor Corp.;Lakeville;MN;USA;Nigel R. Farrar;Hewlett-Packard Co.;Palo Alto;CA;USA;John Piatt;Extraction Systems Inc.;Franklin;MA;USA;Devon Kincad;Extraction Systems Inc.;Franklin;MA;USA;Bill Goodwin;Extraction Systems Inc.;Franklin;MA;USA;Oleg Kishkovich;Extraction Systems Inc.;Franklin;MA;USA;John Higley;Extraction Systems Inc.;Franklin;MA;USA;Phil Cate;Extraction Systems Inc.;Franklin;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
98.Contrast enhancement by alkali decomposable additives in quinonediazide-type positive resists

机译：醌二叠氮型正性抗蚀剂中碱可分解添加剂的对比度增强
- 作者：Yasunori Uetani;Sumitomo Chemical Co.;Ltd.;Konohana-ku Osaka;Japan;Jun Tomioka;Sumitomo Chemical Co.;Ltd.;Chuo-ku;Osaka Osaka;Japan;Hiroshi Moriuma;Sumitomo Chemical Co.;Ltd.;Konohana-ku Osaka Osaka;Japan;Yoshiko Miya;Sumitomo Chemical Co.;Ltd.;Konohana-ku Osaka;Japan.
- 会议名称：《Advances in Resist Technology and Processing XV》
99.New design principle for the PACs of novolak resists

机译：酚醛清漆抗蚀剂PAC的新设计原理
- 作者：Salil Jha;Polytechnic Univ.;Brooklyn;NY;USA;Arnost Reiser;Polytechnic Univ.;Brooklyn;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》
100.Recent advances in increasing the thermal flow resistance of acetal derivatized polyhydroxystyrene deep-UV matrix resins

机译：缩醛衍生化聚羟基苯乙烯深紫外线基质树脂的耐热流动性的最新进展
- 作者：Janet M. Kometani;Lucent Technologies/Bell Labs.;Murray Hill;NJ;USA;Francis M. Houlihan;Lucent Technologies/Bell Labs.;Murray Hill;NJ;USA;Allen G. Timko;Lucent Technologies/Bell Labs.;Murray Hill;NJ;USA;Omkaram Nalamasu;Lucent Technologies/Bell Labs.;Murray Hill;NJ;USA;Elsa Reichmanis;Lucent Technologies/Bell Labs.;Murray Hill;NJ;USA;S.A. Heffner;Lucent Technologies/Bell Labs.;Murray Hill;NJ;USA;Mary E. Galvin;Lucent Technologies/Bell Labs.;Murray Hill;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XV》