SOTF-BTI - an S-Parameters based on-the-fly Bias Temperature Instability Characterization Method

摘要

Among various device degradation modes, bias temperature instability (BTI) is one of the key reliability concerns. Throughout the years the measurement of true BTI degradation which incorporate fast recovery component is a key focus for the faster characterization techniques. In this study a novel S-Parameter based BTI characterization method is demonstrated. This technique distinguishes itself from other BTI characterization methods, that it does not constitute any recovery component as the degradation is monitored without disengaging the stress condition while using the standard RF measurement setup.