1D and 2D Time-Resolved Emission Measurements of Circuits Fabricated in 14 nm Technology Node

摘要

Time-Resolved Emission (TRE) measurements for circuit debugging, fault localization, and circuit characterization are discussed along with recent detectors developments that have improved their low-voltage sensitivity, while maintaining an excellent jitter and low noise performance. Advantages and disadvantages of TRE methodologies are discussed and contrasted with laser probing techniques. 14 NM test cases are presented for logic debug, SRAM characterization, and early technology development. Finally, several advanced applications that are mostly unique to TRE are summarized. TRE has a unique capability to contribute to test and diagnostics applications, especially when conditions make laser-based technique difficult to use due to its invasiveness and the lack of resolution.