Ultra-narrow Si Fins with low LER/LWR for 16/14nm node fabricated by 1D hard mask wet trimming

摘要

In this paper, the impact of structure and material of hard mask wet trimming (HMWT) process on the formation of Si Fins and their LER/LWR is investigated experimentally. Combining a capping layer with slow wet etching rate can effectively improve HMWT controllability and suppress LER/LWR of Si Fins. Based on the optimized HMWT, ultranarrow Si Fins with 5nm width and 40x aspect ratio is successfully fabricated.