Improved Methodology for Planar TEM Sample Preparation

摘要

preparing high-quality transmission electron microscopy (TEM) specimens is an important aspect for detailed physical failure analysis and material analysis. The development of the focused ion beam (FIB) microscope has greatly enhanced TEM specimen preparation capabilities. Localized plan view TEM samples have been prepared from silicon semiconductor wafers using the focused ion beam lift-out technique. The plan view technique offers site specific TEM capability from a horizontal section rather than a vertical cross section. The sections can be taken from any layer and can be angled if desired. The technique consists of milling a wedge shaped piece of material which is free from the substrate, lifting this out using an EasyLift micromanipulator and orientating it on the substrate with the original surface vertical. All preparation procedures are carried out without breaking the vacuum, thus making the whole process faster and reduced the chances of damaging the lamella during loading and unloading of TEM grid.