Novel RF Devices with Multiple Capacitively-Coupled Electrodes

摘要

We present operation concepts and performance characteristics of novel microwave devices and structures using Oxide-AlGaN/GaN Heterostructures with multiple capacitively-coupled contacts (C~3). The C~3 electrodes do not require annealing and, hence, such devices with tight electrode spacing can be fabricated using a self-aligned process. To illustrate the advantages of C~3-technology, we demonstrate multi-gate C~3-RF switches, RF switches with side control electrodes and novel RF-TLM test structures for layer and contact parameter extraction.