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Ni-Zn Ferrite Film Coated on-Chip RF Inductor Fabricated by A Novel Powder-Mixed-Photoresist Coating Technique

机译:Ni-Zn铁氧体薄膜通过新型粉末混合 - 光致抗蚀剂涂层技术涂覆片上射频电感器

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This paper reports fabrication and characterization of on-chip RF inductors with integrated Ni-Zn ferrite films using a novel powder-mixed-photoresist coating technique. Well crystallized Ni0.3Zn0.6Cu0.1Fe2O4 powders are mixed into photoresist and then coated on top of RF inductor spirals for performance improvement. This new low-temperature fabrication method is developed to eliminate any damage introduced by conventional high temperature process (>600掳C) used in fabricating ferrite-integrated RF IC inductors. Measurement results show that, compared with air-cored inductor, the inductance (L) of ferrite film inductors increases by 14-27% across 0.1-4GHz range. This work demonstrates a promising way to fabricate ferrite-integrated high-performance on-chip RF inductors in CMOS technology for RF SoC designs.
机译:本文报告了使用新型粉末混合光致抗蚀剂涂料涂料与集成的Ni-Zn铁氧体膜的片上RF电感器的制造和表征。结晶Ni0.3ZN0.6CU0.1F2O4粉末混合到光致抗蚀剂中,然后涂覆在RF电感螺旋顶部以进行性能改善。这种新的低温制造方法是开发出用于制造铁氧体集成的RF IC电感器中使用的传统高温工艺(> 600℃)引入的任何损坏。测量结果表明,与空气芯电感器相比,铁氧体薄膜电感器的电感(L)在0.1-4GHz范围内增加14-27%。这项工作展示了一种有希望的方法来制造用于RF SoC设计的CMOS技术中的铁氧体集成的高性能片上RF电感。

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