Advanced Substrate Technology for Heterogeneous Integration

摘要

The rapid development of semiconductor technology and multi-function demands of end products has driven IC foundry industry toward 7nm node process, and even next generation of 5nm.[1] The I/O pitch of chip is reduced accordingly but the interconnection of build-up of IC carrier is still large to fit the IC interconnects (Fig. 1). In order to overcome the gap of I/O pitch between IC chip and carrier, the interposer technology has been considered as a solution to resolve the issue.