A Study on the ESD Protection Device LIGBT with Floating N+ Diffusion Region Using Stack Technology

摘要

In this paper, we propose a Lateral insulated-gate bipolar transistor (LIGBT) based device using stack technology for electrostatic discharge (ESD) protection. This new ESD surge protection device inserts a floating N + region into the N-Well of a conventional LIGBT structure to provide a low trigger voltage and a high holding voltage. In addition, the stack technology makes it possible to apply in applications requiring higher voltages by increasing the trigger voltage and holding voltage.