HfO2 gated, self aligned and directly contacted indium arsenide quantum-well transistors for logic applications — A temperature and bias dependent study

摘要

The authors have demonstrated an insulated gate quantum-well transistor architecture using InGaAs/InAs quantum well with an HfO₂/TaN gate stack and self aligned ohmic contacts directly contacting the quantum-well. Temperature dependent measurements indicate a high mobility limited by phonon scattering is achievable under moderate to high gate field making it another promising device architecture for future VLSI logic applications.