Pennsylvania State Univ., University Park, PA, USA;
III-V semiconductors; VLSI; field effect logic circuits; field effect transistors; hafnium compounds; indium compounds; ohmic contacts; quantum well devices; semiconductor device metallisation; tantalum compounds; HfOsub2-/subTaN; InGaAs-InAs; VLSI logic; directly contacted quantum well transistor; insulated gate quantum well transistor; logic application; self aligned ohmic contact;
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机译:自对准后栅极磷化铟和砷化铟镓砷场效应晶体管(FET,光电)的研究。
机译:阴离子结合的有机受体的光谱和DFT研究:时间依赖性研究和逻辑门应用
机译:HFO