2 with and without H 2O 2 treatment as gate dielectrics for pentacene thin-film transistor applications]]>

摘要

Graphical abstractO 1s core-level spectra for (a) as-cleaned and (b) H2O2-treated SiO2samples and (c) the difference between the O 1s XPS spectra for as-cleaned and H2O2-treated SiO2samples.Note that the existence of a hydrogenated layer between pentacene and SiO2leads to a change in the pentacene-SiO2interaction, increasing the value of the carrier mobility in the pentacene/SiO2–based organic thin-film transistor.Display OmittedHighlights?H2O2treatment led to the reduced number of trap states at the SiO2surface.?The pentacene transistor (PTFT) shows depletion-mode behavior.?A hydrogenated layer gives significant contributions