A 4.8GB/s 256Mb(x16) Reduced-Pin-Count DRAM and Controller Architecture (RPCA) to Reduce Form-Factor Cost for IOT/Wearable/TCON/Video/AI-Edge Systems

摘要

A new breed of Form-Factor-Driven DRAMs offers 80% lower standby power and > 50% IO signal reduction vs. Capacity-Driven commodity DRAM. Command/address/data are multiplexed onto 16 pins and combined with a Serial Control Pin in a Single-Edge-Pinout-Floorplan, providing bus efficiency >98%. Major SOC-DRAM subsystem cost savings are enabled via die size, packaging and PCB area savings using this RPCA. A 100× speedup of array fills using a new Group Write circuit further reduces test cost.