Quantum Confinement Effects and Electrostatics of Planar Nano-scale Symmetric Double-Gate SOI MOSFETs

摘要

The effects of quantum confinement on the charge distribution in planar Double-Gate (DG) SOI (Siliconon-Insulator) MOSFETs were examined, for sub-10 nm SOI film thicknesses (t_si ≤ 10 nm), by modeling the potential experienced by the charge carriers as that of an an-harmonic oscillator potential, consistent with the inherent structural symmetry of nanoscale symmetric DGSOI MOSFETs. By solving the 1-D Poisson's equation using this potential, the results obtained were validated through comparisons with TCAD simulations. The present model satisfactorily predicted the electron density and channel charge density for a wide range of SOI channel thicknesses and gate voltages.