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A New dual directional SCR with high holding voltage for High Voltage ESD protection

机译:具有高保持电压的新型双向可控硅,用于高压ESD保护

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In this paper, A novel high holding voltage dual-directional SCR (HHV-DDSCR) is proposed. The ESD I-V characteristics of HHV-DDSCR and DDSCR (dual-directional SCR) are simulated with the Sentaurus TCAD software. Compared with the DDSCR, the new HHV-DDSCR dramatically increases the holding voltage from 2V to 14V with relatively stable trigger voltage, which can provide efficient ESD protection for high voltage (HV) ICs. Besides, the influence of the parasitic BJTs in HHV-DDSCR on the device performance has also been studied.
机译:本文提出了一种新型的高保持电压双向可控硅(HHV-DDSCR)。使用Sentaurus TCAD软件模拟了HHV-DDSCR和DDSCR(双向SCR)的ESD I-V特性。与DDSCR相比,新型HHV-DDSCR通过相对稳定的触发电压将保持电压从2V大幅提高到14V,从而可以为高压(HV)IC提供有效的ESD保护。此外,还研究了HHV-DDSCR中寄生BJT对器件性能的影响。

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