Bi-Directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structures

摘要

Bi-directional back-to-back stacked SCRs for high-voltage pin ESD protection, methods of manufacture and design structures are provided. The device includes a symmetrical bi-directional back-to-back stacked silicon controlled rectifier (SCR). An anode (10a) of a first of the back-to-back stacked SCR (10) is connected to an input (30). An anode (20a) of a second of the back-to-back stacked SCR (20) is connected to ground (GND). Cathodes (10b, 20b) of the first and second of the back- to-back stacked SCR are connected together. Each of the symmetrical bi-directional back-to-back SCRs include a pair of diodes (Di, D2) directing current towards the cathodes which, upon application of a voltage, become reverse biased effectively deactivating elements from one of the symmetrical bi-directional back-to-back SCRs while the diodes (D3, D4) of another of the symmetrical bi-directional back-to-back SCRs direct current in the same direction as the reverse biased diodes.