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External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes

机译：基于单层MoTe 2 的近红外发光二极管的外部量子效率

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摘要

We demonstrated a monolayer MoTe₂ based near-IR light emitting diode on SiO₂/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10^-4 ~ 5×10^-3 at 5 ~ 300K.

机译：我们展示了单层MoTe _{2
SiO基的近红外发光二极管
_{2
/ Si衬底并首次确定器件的外部量子效率在10的范围内
^{-4
〜5×10
^{-3
在5〜300K。}}}}

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《》|2019年|1-2|共2页
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作者
Jiabin Feng; Yongzhuo Li; Song Fu; Jianxing Zhang; Zizhao Zhong; Hao Sun; Lin Gan; C.Z. Ning;
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关键词
Light emitting diodes; Silicon; Substrates; Photonics; Optical pumping; Temperature measurement; Temperature dependence;

机译：发光二极管;硅;基板;光子学;光泵浦;温度测量;温度依赖性;

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1. 3+-activated Na2Gd(PO4)(MoO4): A novel high-brightness red-emitting phosphor with high color purity and quantum efficiency for white light-emitting diodes]]> [J] . Xiaoyong Huang, Heng Guo, Bin Li Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2017,第期

机译：<！[cdata [eu 3 + -activated na 2 gd（po 4 ）（MOO 4 ）：一种新型高亮度红发荧光粉，具有高色纯度和白色发光二极管的量子效率]]>
2. x Ga 1?x N/GaN quantum well is more advantageous for quantum well light emitting diodes]]> [J] . Anup Gorai, Apu Mistry, Dipankar Biswas Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2017,第期

机译：<！ inf loc =“post”> 1？x n / gaan量子阱对量子阱发光二极管更有利]]>
3. Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al 2O 3 [J] . Kwangeun Kim, Mengyuan Hua, Dong Liu, Nano Energy . 2018,第期

机译：IngaN / GaN蓝色发光二极管效率提高Aln / Al 2 O 3
4. External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes [C] . Jiabin Feng, Yongzhuo Li, Song Fu, Conference on Lasers and Electro-Optics . 2019

机译：单层MOTE 2 基于近红外发光二极管的外部量子效率
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

机译：GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
6. Diarylboron‐Based Asymmetric Red‐Emitting Ir(III) Complex for Solution‐Processed Phosphorescent Organic Light‐Emitting Diode with External Quantum Efficiency above 28 [O] . Xiaolong Yang, Haoran Guo, Boao Liu, 2018

机译：基于二芳基硼的不对称红光Ir（III）配合物用于溶液处理的外部量子效率高于28％的磷光有机发光二极管
7. Organic Light-Emitting Diodes: Achieving Nearly 30 External Quantum Efficiency for Orange-Red Organic Light Emitting Diodes by Employing Thermally Activated Delayed Fluorescence Emitters Composed of 1,8-Naphthalimide-Acridine Hybrids (Adv. Mater. 5/2018) [O] . Weixuan Zeng, Hsin-Yu Lai, Wei-Kai Lee, 2018

机译：有机发光二极管：通过采用由1,8-萘二亚胺杂交物组成的热活化延迟荧光发射器来实现橙红色有机发光二极管的近30％的外量子效率（ADV。Mater。5/2018）
8. Pressure Study of the External Quantum Efficiency of N-Doped GaAs(1-x)P(x) Light-Emitting Diodes. [R] . Nelson, R. J., Holonyak, N., Coleman, J. J., 1976

机译：N掺杂Gaas（1-x）p（x）发光二极管外量子效率的压力研究。

External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes

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