x Ga 1?x N/GaN quantum well is more advantageous for quantum well light emitting diodes]]>

摘要

AbstractWe investigate the impact of non uniform distribution of indium (In) in the InxGa1-xN/GaN quantum well (QW) light emitting diodes as compared to the uniform distribution of In. Computations are based on the self-consistence solutions of Schr?dinger and Poisson's equations. The transition probabilities have been studied for various In distributions in the QW. A very interesting and striking information emerges through the studies, that the overlap of electron and hole wave functions increase in the non uniformly distributed In leading to higher luminosity. With the consideration of multistep staggered QWs, the overlap of electron and hole wave functions increased more significantly. The results of the overlap and peak emission energies for the uniform and non uniform distribution of In in the QW are presented with suitable discussions.Results show that the QW with uniform In distribution is not the best for InxGa1-xN/GaN QW LEDs.]]>