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A Small “Dead-Area” Packaging Approach for Front Side Illuminated Photodiode

机译:一种用于正面照明光电二极管的小型“死区”封装方法

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To increase the density of packaging, we propose a novel three-dimensional high-aspect-ratio packaging approach for conventional front side illuminated photodiode, which is able to fabricate a narrow spacing between the edge of package and the edge of die. Sliver-epoxy adhesive is used as conductive layer and formed over the SU8 photoresist by fluid dispensing or stencil printing process. In addition, a package substrate is designed and fabricated. The electro-optical properties of photodetectors, which is based on silicon photomultiplier, are measured, such as current-voltage characteristic, dark count rate, photoelectron spectrum, and photon detection efficiency. The test results show that there is no significant differences of electro-optical characteristics between this packaging approach and conventional wire bonding. Meanwhile, the minimum area of photodetector packaged successfully is 11.02 mm2 (3.36mm×3.28mm) and it is not 1.2 times greater than that of the chip before packaging. This packaging approach is promising for compact packaging, where the flip-chip and TSV are hard to carry out, and this technology, at the same time, makes it possible to obtain succinctly and cost-effectively a chip-scale package.
机译:为了增加包装的密度,我们提出了一种新颖的三维高纵横比包装方法,用于常规的正面照明光电二极管,该方法能够在包装的边缘和管芯的边缘之间制造出狭窄的间距。银-环氧胶粘剂用作导电层,并通过流体分配或模版印刷工艺在SU8光致抗蚀剂上形成。另外,设计和制造封装基板。测量基于硅光电倍增管的光电探测器的电光特性,例如电流-电压特性,暗计数率,光电子谱和光子探测效率。测试结果表明,这种封装方法与常规引线键合之间的电光特性没有显着差异。同时,成功封装的光电探测器的最小面积为11.02 mm2(3.36mm×3.28mm),并且不比封装前芯片的最小面积大1.2倍。对于难以进行倒装芯片和TSV的紧凑型封装,这种封装方法很有前途,同时,该技术使简洁,经济高效地获得芯片级封装成为可能。

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