Impact of Forming Voltage Polarity on HfO2-based RRAM Performance

机译：电压极性的形成对基于HfO 2 的RRAM性能的影响

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, the impact of forming voltage polarity on Pt/HfO₂/TiN RRAM performance is investigated. Experimental results show that performance including forming voltage and resistance ratio can be improved by tuning the forming voltage polarity at the inert electrode. The underlying mechanism may be the suppression of the filament overgrowing by the reverse forming voltage.

机译：本文研究了电压极性对Pt / HfO的影响 _{2
/ TiN RRAM性能进行了研究。实验结果表明，通过调节惰性电极上的形成电压极性，可以改善包括形成电压和电阻比在内的性能。潜在的机制可能是通过反向形成电压来抑制细丝过度生长。}

著录项

来源
《China Semiconductor Technology International Conference》|2019年|1-3|共3页
会议地点
作者
Jian Kang; Zongwei Wang; Yishao Chen; Yichen Fang; Qilin Zheng; Yuchao Yang; Jintong Xu; Yimao Cai; Ru Huang;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
aluminium; electrical resistivity; hafnium compounds; resistive RAM; tantalum compounds;

机译：铝;电阻率; ha化合物;电阻RAM;钽化合物;
入库时间 2022-08-26 14:34:22

相似文献

外文文献
中文文献
专利

1. 0.5Co 0.2Mn 0.3O 2 cathode material via surface modification with lithium-conductive Li 3Fe 2(PO 4) 3]]> [J] . Bin Huang, Guangzhe Li, Zhefei Pan, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2019,第期

机译：<！[CDATA [提高线路的高压性能 0.5 CE：INF PLACE =“POST”> 0.2 MN：INF PLACE = “POST”> 0.3 O 2 通过表面改性的阴极材料与锂导电LI 3 fe 2 （po 4 ）<什么：Inf Place = “帖子”> 3 ]]>
2. 1/3Co 1/3Mn 1/3O 2 cathode achieved by application of LiPO 2F 2 electrolyte additive]]> [J] . Jiawei Chen, Lidan Xing, Xuerui Yang, Electrochimica Acta . 2018,第期

机译：<！[CDATA [高压线路的出色电化学性能 1/3 CE：INF PLACE =“POST”> 1/3 Mn 1/3 o 2 通过应用Lipo 2> 2 F 2 电解质添加剂]]>
3. 2O 3 ceramic fillers in LiNi 1/3Co 1/3Mn 1/3O 2 cathodes for improving high-voltage cycling and rate capability performance]]> [J] . Dahee Jin, Danoh Song, Alex Friesen, Electrochimica Acta . 2018,第期

机译：<！[AL 2 O 3 陶瓷填料在线 1/3 CO 1/3 MN 1/3 O 2 用于改善高压循环和速率能力性能的阴极]]>
4. Impact of Forming Voltage Polarity on HfO2-based RRAM Performance [C] . Jian Kang, Zongwei Wang, Yishao Chen, China Semiconductor Technology International Conference . 2019

机译：形成电压极性对HFO 2 基于RRAM性能的影响
5. étude de L'effet d'un Impact à Basse Vitesse sur le Tube Inférieur d'un Vélo en Composite [D] . Cormier, Jean-Richard. 2017

机译：低速冲击对复合自行车下管的影响研究
6. Impacts of Cu-Doping on the Performance of La-Based RRAM Devices [O] . Yongte Wang, Hongxia Liu, Xing Wang, 2019

机译：铜掺杂对基于La的RRAM器件性能的影响
7. Temperature impact (up to 200 #x00B0;C) on performance and reliability of HfO2-based RRAMs [O] . T. Cabout, L. Perniola, V. Jousseaume, 2013

机译：HFO 2 基于RRAM的性能和可靠性的温度影响（最多200°C）

Impact of Forming Voltage Polarity on HfO2-based RRAM Performance

摘要

著录项

相似文献

相关主题

期刊订阅