Investigation of Structural and Electronic Environments of Nitrogen-Doped CVD-Grown DLC Films

摘要

Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by thermal chemical vapor deposition technique by varying the nitrogen flow rate at a constant C_2H_2 flow. The influence of nitrogen incorporation on the microstructure and structural electronic properties of N-DLC films were investigated by Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS). SEM images reveal the DLC nanopar-ticles formation and carbon nanowires formations for 70 and 130 seem nitrogen flow rate respectively. The Raman spectra of N-DLC investigated D and G peaks at 1300 and 1600 cm~(-1) respectively. X-ray diffraction of N-DLC indicated the crystallite sizes 1.74 and 8.78 nm at different peak position. Due to nitrogen incorporation in DLC thin films the core orbital spectra of C(ls) shifted from 284 to 286 eV for nitrogen flow increased from 70 to 130 seem. In the present paper, an attempt has been made to synthesize nitrogen incorporated DLC films using thermal chemical vapor deposition technique to study their structural and microstructural properties.