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Preeminent Buffer Insertion Technique For Long Advanced On-Chip Graphene Interconnects

机译:先进的长片上石墨烯互连的卓越缓冲插入技术

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Graphene has become as one of the prospective on-chip VLSI interconnect materials due to its several superior electrical and mechanical properties. Graphene derived multi-layer graphene nanoribbon (MLGNR) has been investigated as one of the aptly suited on-chip VLSI interconnects. Long on-chip MLGNR interconnects are prone to various non-ideal effects such as signal degradation and crosstalk. The performance of the system deteriorates significantly as the length of interconnect increases. To mitigate this graving issue, novel buffer insertion technique for on-chip long MLGNR interconnects has been systematically presented and analyzed in the current paper. The practical CMOS driver-MLGNR interconnect-load model has been considered for analysis. The different analyses have been performed at 22nm technology node.
机译:石墨烯由于其多种优越的电气和机械性能,已成为潜在的片上VLSI互连材料之一。石墨烯衍生的多层石墨烯纳米带(MLGNR)已被研究为最适合的片上VLSI互连之一。长的片上MLGNR互连易于产生各种非理想的影响,例如信号衰减和串扰。随着互连长度的增加,系统的性能将大大降低。为了缓解这一严重问题,目前已系统地提出并分析了用于片上长MLGNR互连的新型缓冲器插入技术。实际的CMOS驱动器-MLGNR互连负载模型已被考虑进行分析。在22nm技术节点上已执行了不同的分析。

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