Impact of Body Diode and Anti-parallel JBS Diode on Switching Performance of 3rd Generation 10 kV SiC MOSFET

摘要

The impact of the body diode and the anti-parallel junction barrier Schottky (JBS) diode on the switching performance of the 3rd generation 10 kV SiC MOSFET from Wolfspeed/Cree is investigated in detail at various junction temperatures. The switching performance with and without the anti-parallel JBS diode is tested by specific layout design of the 10 kV MOSFET module. The body diode of the 10 kV SiC MOSFET has excellent reverse recovery performance from 25°C to 125 °C, indicating it is a suitable candidate for freewheeling diode. The application of anti-parallel JBS diode will slow down the turn-off transient and result in lower turn-off dv/dt and higher turn-off energy loss, while its impact on the turn-on transient is not significant.