18GHz-/28GHz-Band Gain-Boosted Feedback Power Amplifiers Using Affordable GaN HEMT MMIC Process

摘要

Gain-boosted feedback power amplifiers have been developed for high-frequency band wireless communication systems. To increase communication bandwidth, higher frequency bands such as the 28GHz band will be adopted for next-generation wireless communication systems. Generally, active semiconductor devices, which can be used at high frequencies with sufficient performance, tend to be expensive because of employing an advanced manufacturing process such as electron beam lithography for forming narrower channels. To apply an affordable manufacturing process to high-frequency design, a gain-boosted feedback amplifier technique was used for the proposed amplifiers. A measured small-signal power gain that has near-MSG/MAG peak gain, and the input-output power response are shown.