Implementation of mmWave AlGaN/GaN HEMTs and Power Amplifier MMICs

摘要

AlGaN/GaN high electron mobility transistors (HEMT) are designed and fabricated based on 0.15 μm gate-length technology. All source electrodes of multi-finger devices are connected to the through-hole ground instead of using air bridges. Device RF measurements show that they can operate at millimeter wave frequencies. Parasitic and intrinsic parameters of the small signal equivalent circuit model are extracted at reverse cut-off and operating bias state. The revised Angelov expressions are adopted to describe nonlinear characteristics, and the large-signal model is constructed using the symbolically defined device (SDD) method. Using these devices, a two-stage, four-channel monolithic microwave integrated circuit (MMIC) power amplifier is realized with 36 dBm output power, 9 dB power gain and 10 percent power-added efficiency (PAE) at 34 GHz.