A New Process and Tool for Metal/High-K Gate Dielectric Stack for sub-45nm CMOS Manufacturing

摘要

In this paper we report the results of a new process and tool to deposit metal/high-k gate dielectric stack. Hafnium Oxide dielectric of 0.39nm EOT is deposited using Monolayer photo-assisted deposition process on a home-built system to provide a reliable and robust process to tackle the needs of the future CMOS generations. We report the results of 0.39nm EOT gate dielectric material with a leakage current density value of about 1×10{sup}(-12)A/cm{sup}2 for gate voltage from +3V to -3V. The data presented in this paper demonstrate that the process is robust and manufacturing tools can be developed without any fundamental barrier.