Resistive Switching Behaviours and Novel Device Applications of Metal-Oxide-Si/Ge Structures

摘要

To achieve fab-friendly RRAM, metal-oxide-(Si, SiGe or Ge) structure is a promising device structure. In this paper, we discuss the challenges for developing high performance RRAM with this structure. Resistive-switching layer inserting and interface engineering are proposed for enhancing the device performance. And CMOS compatible Si and Ge-based bipolar RRAM (TiN/Al-doped-HfO_x/Si and TiN/HfO_x/GeO_x/Ge) cells with ultra-low operations current, asymmetric I-V characteristics, good retention behaviors and AC switching properties are also demonstrated. Furthermore, the reported works show that TiN/HfO_x/GeO_x/Ge structured RRAM cell is very promising for future high performance content addressable memory (CAM) application.