Irradiating resist during the production of integrated switching arrangement comprises forming radiation-sensitive resist layer arrangement after producing layer to be structured and irradiating the resist layer arrangement

摘要

Irradiating a resist during the production of an integrated switching arrangement comprises forming a radiation-sensitive resist layer arrangement (10) after producing a layer (12) to be structured, and irradiating the resist layer arrangement using a radiation source. During irradiation the structure of a region (40-44) close to the radiation source is changed in such a way that the region is selectively developed and the structure of a region (46-50) of the resist layer arrangement away from the radiation source covered by the region close to the radiation source is only slightly changed.