A First Principle Study of the Carrier mobility and Injection Velocity for Strained 2D materials MOSFETs

摘要

We present a comprehensive first principle investigation of the carrier mobility and injection velocity in several typical 2 dimensional (2D) materials, which hold great potential for the future post-silicon ultra-scaled MOSFETs. Our numerical results that relaxed InSe and WS2 monolayer exhibits superior electron transport, wide bandgap tunability than their counterparts of MoS2 or WSe2. The strained monolayer and few-layer InSe and WS2 are thus a promising candidate for future 2D electronic nano-devices and will be systematically discussed in our regular manuscript later.