Numerical Simulation of Gunn Oscillation in AlGaAs/InGaAs High-Electron Mobility Transistor

摘要

The Gunn oscillation in an AlGaAs/InGaAs high-electron mobility transistor is numerically simulated. Using the commercial drift-diffusion simulator with a mobility model considering the negative differential mobility effect, the autonomous on-set of the Gunn oscillation is directly observed. The Gunn oscillation can be observed only for a certain range of bias voltages. The electron density clearly shows that the recessed region between the gate and drain terminals plays an important role. The oscillation frequency and amplitude are shown as functions of the bias voltages.