Heat dissipation characterization and application of SiC power devices by transient thermal measurement

摘要

In this study, we carry out the heat shock test to the SiC MOSFET, and the thermal resistance change before and after the test were measured by transient thermal measurement. It was confirmed that the thermal resistance of the solder layer has increased after the test. From the results of the cross-sectional SEM observation, we found that delamination occurs in the interface of the solder layer and the chip. It was identified as the cause of increased thermal resistance.