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Improved SNR, On-Chip Differentially Modulated TISM Signaling in HV DMOS Process for Mutual Capacitance Fingerprint Sensor

机译:互电容指纹传感器的HV DMOS工艺中改进的SNR,片上差分调制TISM信号

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摘要

We propose improved SNR through on-chip Differentially Modulated Signaling with High Voltage (HV) based on Time-Interleaved Sensing Method (TISM) in fingerprint sensing. Tx driver transmits the 0 to 20V-pulse output with proposed signaling into Fingerprint Sensor (FPS), in order to increase the signal to noise ratio (SNR). When capacitance difference of valley-ridge is 0.4fF, the proposed differentially modulated TISM (DM-TISM) signaling is achieved to greater SNR (3.3dB) than that of conventional TISM in performance of fingerprint sensor readout IC architecture, when noise transient is included. Tx driver consists of 4 identical channels. A chip size is 1.3 × 1.1 mm2and prototype is fabricated in 0.25-um BCDMOS process.
机译:我们提出了基于时间交错传感方法(TISM)的指纹识别中的高电压(HV)片上差分调制信号,从而提高了SNR。 Tx驱动器将带有建议信号的0至20V脉冲输出传输到指纹传感器(FPS),以提高信噪比(SNR)。当谷脊电容差为0.4fF时,在包括噪声瞬变的情况下,在指纹传感器读出IC架构的性能方面,所建议的差分调制TISM(DM-TISM)信号实现了比常规TISM更高的SNR(3.3dB)。 。 Tx驱动程序由4个相同的通道组成。芯片尺寸为1.3×1.1毫米 2 原型采用0.25um BCDMOS工艺制造。

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