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Improved SNR, On-Chip Differentially Modulated TISM Signaling in HV DMOS Process for Mutual Capacitance Fingerprint Sensor

机译:改进的SNR,在HV DMOS工艺中改进的SNR,片上差异调制的TISM信号,用于相互电容指纹传感器

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We propose improved SNR through on-chip Differentially Modulated Signaling with High Voltage (HV) based on Time-Interleaved Sensing Method (TISM) in fingerprint sensing. Tx driver transmits the 0 to 20V-pulse output with proposed signaling into Fingerprint Sensor (FPS), in order to increase the signal to noise ratio (SNR). When capacitance difference of valley-ridge is 0.4fF, the proposed differentially modulated TISM (DM-TISM) signaling is achieved to greater SNR (3.3dB) than that of conventional TISM in performance of fingerprint sensor readout IC architecture, when noise transient is included. Tx driver consists of 4 identical channels. A chip size is 1.3 × 1.1 mm2and prototype is fabricated in 0.25-um BCDMOS process.
机译:我们提出了基于指纹感测中的时间交织传感方法(TISM)的高压(HV)通过片上差异调制的信号传导的SNR。 TX驱动器将0到20V脉冲输出传输到指纹传感器(FPS)中,以增加信噪比(SNR)。当谷脊的电容差为0.4FF时,当包括噪声瞬态时,所提出的差异调制的TIM(DM-TISM)信令(DM-TISM)信号传导比在指纹传感器读数IC架构的性能中的常规TIS中实现。 TX驱动器由4个相同的通道组成。芯片尺寸为1.3×1.1 mm 2 并在0.25-UM BCDMOS过程中制造原型。

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