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High-density fan-out technology for advanced SiP and 3D heterogeneous integration

机译:高密度扇出技术可实现高级SiP和3D异构集成

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This paper reviews our advanced fan-out wafer-level packaging (FOWLP) technologies for hetero-integrated wafer-level system-in-package (WL-SiP) and 3D heterogeneous integration package (3D SWIFT). WL-SiP and 3D SWIFT can integrate various functional dies such as memory, logic, power IC, RF and passive components in wafer-level, therefore are latest fan-out wafer-level packaging technologies for scaled systems with more high performance, multi-functionality, and less power consumption. However, advanced fan-out packaging requires scaled Cu trace pitch and more layers in the redistribution layer (RDL). These trends induce potential reliability challenges. This paper introduces a representative electrical reliability challenge in scaled L/S Cu RDL for advanced fan-out wafer-level packaging (FOWLP).
机译:本文回顾了我们先进的扇出晶圆级封装(FOWLP)技术,该技术适用于异质集成的晶圆级系统级封装(WL-SiP)和3D异质集成封装(3D SWIFT)。 WL-SiP和3D SWIFT可以在晶片级集成各种功能芯片,例如存储器,逻辑,电源IC,RF和无源组件,因此是用于具有更高性能,更多性能的可扩展系统的最新扇出晶片级封装技术。功能,并降低功耗。然而,先进的扇出封装需要按比例缩放的铜走线间距和重新分布层(RDL)中的更多层。这些趋势引发了潜在的可靠性挑战。本文介绍了用于高级扇出晶圆级封装(FOWLP)的按比例缩放的L / S Cu RDL所代表的电气可靠性挑战。

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