A simplified Angelov self-heating modeling using Short and long duration Pulsed I-V measurement for a GaN HEMT

摘要

In this paper, a simplified Angelov GaN self-heating model is introduced. In order to separate the current reduction from temperature effect clearly, the new self-heating extracted process has four steps. The first one is to extract the reference current parameters based on short pulsed I-Vat 25°C. Then, the parameters $(K_{I P K}, K_{P 1})$) related to current reduction are obtained using short pulsed I-V reduction at 85°C and 125°C. Thirdly, the parameters of self-heating thermal subcircuit with three time constants are determined by the long duration Pulsed I-V. Finally, this model is validated by the DC I-V. Using this process, the current reduction and temperature effect can be differentiated more clearly, and thus only two parameters ($(K_{I P K}, K_{P 1})$) are related to current reduction. The Angelov modeling is simplified, and the result agrees well.