Above 100-GHz low phase noise frequency generation in silicon integrated technologies

摘要

This paper summarizes the design techniques in integrated Silicon technologies for oscillator signal generation above fmax. It describes the general schematics using N-push techniques in oscillators and their theoretical operating principle. Furthermore, sub-harmonic injection locking is discussed as a solution for low phase noise. Finally, some examples of CMOS and BiCMOS fabricated circuits are given as a proof of concept that demonstrate the feasibility of low phase noise frequency generation around 300 GHz.