HIGH FREQUENCY FOUR NOISE PARAMETERS OF SILICON-ON-INSULATOR-BASED TECHNOLOGY MOSFET: PROSPECTS FOR APPLICATION TO LOW NOISE RF INTEGRATED CIRCUITS

摘要

An exhaustive experimental study of the high frequency noise properties of MOSFET in Silicon- on-Insulator (SOI) technology is presented. Various gate geometries are fabricated to study the influence of effective channel length and gate finger width on the four noise parameters. The high level of MOSFET sensitivity to the minimum noise matching condition is demonstrated. From experimental results, optimization ways to realize ultra low noise amplifiers are discussed.