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Controlling reabsorption effect of Bi-color CdSe Quantum Dots-based White Light-Emitting Diodes

机译:控制基于双色CdSe量子点的白光发光二极管的重吸收效果

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The colloidal semiconductor quantum dots (QDs) have the potentials to be used in white light-emitting diode (WLED) as a down-converting component to replace incandescent lamps, because the traditional WLED composed of Y_3Al_5O_(12):Ce~(3+) (YAG:Ce) phosphor lack of red color emissions and shows low color quality. Among various QDs, CdSe has been extensively studied because it possesses attractive characteristics such as high quantum yields (QYs), narrow emission spectral bandwidth, as well as size-tunable optical characteristics. However, in order to enhance the color rendering index (CRI) of WLED, blending materials with different emission wavelengths has been used frequently. Unfortunately, these procedures are complex and time-consuming, and the emission energy of smaller QDs can be reabsorbed by larger QDs, resulting in decreasing the excitation intensity in yellowish-green region. Therefore, in this study, in order to decrease the reabsorption effect and to simplify the procedures, we have demonstrated a facile thermal pyrolyzed route to prepare bi-color CdSe QDs with dual-wavelengths. The emission wavelengths, particle sizes, and QYs of QDs can be tuned from 537/595 to 537/602 nm, 2.59/3.92 to 2.59/4.01 nm, and 27 to 40 %, for GR1 to 3 samples, respectively when the amount of Se precursor is decreased from 1.5 to 0.75 mmol. Meanwhile, the area ratio of green to red (A_g/A_r) in fluorescence spectra is gradually increased, due to the increase in growth rate, and decrease in nuclei formation in red emission. The GR1, GR2, and GR3 QDs are then encapsulated by convert types to form the LED, in which the QDs are deposited on the blue-emitting InGaN LED chip (λ_(em) = 450 nm). After encapsulation, the devices properties of Commission International d'Eclairage (CIE) chromaticity and A_g/A_r area ratio are (0.40, 0.24), 0.28/1, (0.40, 0.31), 0.52/1, and (0.40, 0.38), 1.02/1, respectively for GR1, GR2, and GR3. The results show that the green emission intensity are strongly reabsorbed by red emission, as the A_g/A_r area ratios are gradually increased and the CIEs are dramatically shift to white light region, suggesting that the Se amount not only can tune the red emission intensity but also can decrease the reabsorption effect. Based on the above results, the GR3 is suitable to be applied for WLED against the reabsorption effect. Besides, when the GR3 is blended with UV resin of 30 wt. % to prepare the WLED, the CIE located at (0.35, 0.34) is applied as backlight source, providing 126 % color gamut in sRGB standard. As a result, by simply adjusting the concentration of Se precursor, QDs with dual-wavelengths can be prepared and the reabsorption effect can be avoided to show promising lighting properties for the application in WLED.
机译:胶体半导体量子点(QDs)具有用作白光发光二极管(WLED)的下转换组件以替代白炽灯的潜力,因为传统的WLED由Y_3Al_5O_(12):Ce〜(3+ )(YAG:Ce)磷光体缺乏红色发射,并且显示出较低的颜色质量。在各种量子点中,由于CdSe具有吸引人的特性,例如高量子产率(QYs),窄的发射光谱带宽以及尺寸可调的光学特性,因此已被广泛研究。但是,为了提高WLED的显色指数(CRI),经常使用具有不同发射波长的混合材料。不幸的是,这些程序复杂且耗时,并且较小的QD的发射能量可以被较大的QD重新吸收,从而导致黄绿色区域的激发强度降低。因此,在这项研究中,为了降低重吸收效果并简化程序,我们证明了一种简便的热解途径,可制备具有双波长的双色CdSe量子点。当GR1到3的样品量分别为时,QD的发射波长,粒径和QY可以分别从537/595到537/602 nm,2.59 / 3.92到2.59 / 4.01 nm和27到40%进行调整。硒前体从1.5降至0.75 mmol。同时,由于生长速率的增加,荧光光谱中绿色与红色的面积比(A_g / A_r)逐渐增加,并且红色发射中的核形成减少。然后,通过转换类型将GR1,GR2和GR3 QD封装起来以形成LED,其中QD沉积在发出蓝色光的InGaN LED芯片上(λ_(em)= 450 nm)。封装后,国际照明委员会(CIE)色度和A_g / A_r面积比的设备属性分别为(0.40,0.24),0.28 / 1,(0.40,0.31),0.52 / 1和(0.40,0.38), GR1,GR2和GR3分别为1.02 / 1。结果表明,随着A_g / A_r面积比逐渐增加,CIE急剧向白光区域转移,绿色发射强度被红色发射强烈吸收,这表明硒含量不仅可以调节红色发射强度,而且可以调节硒的含量。也可能降低重吸收效果。基于以上结果,GR3适用于抗重吸收效应的WLED。此外,当GR3与30重量%的UV树脂共混时。要准备WLED,请使用%(0.35,0.34)的CIE作为背光源,以sRGB标准提供126%的色域。结果,通过简单地调节Se前体的浓度,可以制备具有双波长的QD,并且可以避免重吸收效果,以显示出有希望的照明特性,以用于WLED。

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