Introduction

摘要

The 31st conference on Metrology, Inspection, and Process Control for Microlithography began with two outstanding keynote presentations. Richard M. Silver from National Institute of Standards and Technology began the Keynote Session with "Advancing measurement science at NIST to enable atom-scale technology," starting with nondestructive techniques to techniques with atomic-scale resolution including 3D CD metrology and tomography. This was followed by Philippe Leray from IMEC with, "Metrology challenges for in-line process control," describing energy and angular filtered SEM, metrology of HAR (high aspect ratio) structures, use of SEM to improve accuracy of overlay (OVL), including complicated OVL models, tunable wavelength OCD (scatterometry) and OVL to minimize overlay and CD errors and enable nm-scale uncertainty.