Embedded silicon odometers for monitoring the aging of high-temperature integrated circuits

摘要

We develop data-driven predictive models for reliability and failure mechanisms of integrated circuits (ICs) at high temperature (HT) by characterizing their aging performance using integrated monitoring circuits (“silicon odometers”). Ring oscillators subjected to multiple stress profiles are promising as digital odometers. In initial experiments, the frequencies of six oscillators fabricated in a 0.5 μm CMOS process were measured for more than six months at 195° C. The results were fitted to generate a data-driven aging model. This model provides information on cumulative changes in device parameters that can be utilized by designers to ensure that the system will meet specified HT reliability targets. Preliminary test results from an automated experimental setup that includes a bandgap voltage reference circuit as an additional silicon odometer are also presented.