First demonstration of symmetric lateral NPN transistors on SOI featuring epitaxially-grown emitter/collector regions

摘要

We report the first demonstration of symmetric lateral NPN transistors on SOI having epitaxially-grown emitter/collector (E/C). Employing a novel notch-assisted epitaxy scheme, using faceted Si epi as RIE mask to expose the vertical intrinsic-base epi-seeding surfaces, the epitaxial E/C are automatically connected to extension regions for metal contact and/or for electrical probing. Healthy device I-V characteristics were obtained with post-epi RTA. The results suggest a path forward for devices suitable for low-power THz electronics applications.